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Title: Three-dimensional phonon population anisotropy in silicon nanomembranes

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1369089
Grant/Contract Number:
FG02-04ER46147; AC02-06CH11357
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 96; Journal Issue: 1; Related Information: CHORUS Timestamp: 2017-07-11 05:02:55; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

McElhinny, Kyle M., Gopalakrishnan, Gokul, Holt, Martin V., Czaplewski, David A., and Evans, Paul G. Three-dimensional phonon population anisotropy in silicon nanomembranes. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.014301.
McElhinny, Kyle M., Gopalakrishnan, Gokul, Holt, Martin V., Czaplewski, David A., & Evans, Paul G. Three-dimensional phonon population anisotropy in silicon nanomembranes. United States. doi:10.1103/PhysRevB.96.014301.
McElhinny, Kyle M., Gopalakrishnan, Gokul, Holt, Martin V., Czaplewski, David A., and Evans, Paul G. 2017. "Three-dimensional phonon population anisotropy in silicon nanomembranes". United States. doi:10.1103/PhysRevB.96.014301.
@article{osti_1369089,
title = {Three-dimensional phonon population anisotropy in silicon nanomembranes},
author = {McElhinny, Kyle M. and Gopalakrishnan, Gokul and Holt, Martin V. and Czaplewski, David A. and Evans, Paul G.},
abstractNote = {},
doi = {10.1103/PhysRevB.96.014301},
journal = {Physical Review B},
number = 1,
volume = 96,
place = {United States},
year = 2017,
month = 7
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on July 10, 2018
Publisher's Accepted Manuscript

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