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Title: Localization and transport in a strongly driven Anderson insulator

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Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 96; Journal Issue: 1; Related Information: CHORUS Timestamp: 2017-07-11 05:02:46; Journal ID: ISSN 2469-9950
American Physical Society
Country of Publication:
United States

Citation Formats

Agarwal, Kartiek, Ganeshan, Sriram, and Bhatt, R. N. Localization and transport in a strongly driven Anderson insulator. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.014201.
Agarwal, Kartiek, Ganeshan, Sriram, & Bhatt, R. N. Localization and transport in a strongly driven Anderson insulator. United States. doi:10.1103/PhysRevB.96.014201.
Agarwal, Kartiek, Ganeshan, Sriram, and Bhatt, R. N. 2017. "Localization and transport in a strongly driven Anderson insulator". United States. doi:10.1103/PhysRevB.96.014201.
title = {Localization and transport in a strongly driven Anderson insulator},
author = {Agarwal, Kartiek and Ganeshan, Sriram and Bhatt, R. N.},
abstractNote = {},
doi = {10.1103/PhysRevB.96.014201},
journal = {Physical Review B},
number = 1,
volume = 96,
place = {United States},
year = 2017,
month = 7

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on July 10, 2018
Publisher's Accepted Manuscript

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  • Conditions for Anderson localization are derived for three cases: (1) anisotropic three-dimensional metal, (2) quasi-two-dimensional metal, and (3) quasi-one-dimensional metal. For all these cases the conductivity at [ital T]=0 as well as the interference correction are calculated. The simplest models are used. From the estimate [Delta][sigma]/[sigma][similar to]1, localization conditions are obtained. It is shown that localization takes place in all three cases but in cases (2) and (3) the critical value of the random potential is essentially reduced if the overlap integrals are small. In a two-dimensional metal this refers to the conductivity along the planes whereas for the conductivitymore » perpendicular to the planes the three-dimensional condition applies, i.e., contrary to common wisdom localization in this direction is more difficult to reach than along the planes.« less
  • The [ital zero][minus][ital temperature] Hall coefficient [ital R][sub [ital H]] of a localized-electron insulator is shown to reduce to the free-electron value when the external potential varies slowly on the scale of the localization length. For a general circularly symmetric potential, an exact quantum-mechanical expression for [ital R][sub [ital H]] is derived, and computed for electrons bound to hydrogenlike impurities. It is thus shown that measurements of [ital R][sub [ital H]] in two-dimensional magnetic-field-localized electron systems can distinguish between a pinned Wigner crystal and a strong Anderson insulator, both of which are, at [ital T]=0, Hall insulators.
  • No abstract prepared.
  • We study the counterpart of Anderson localization in driven one-electron Rydberg atoms. By changing the initial Rydberg state at fixed microwave frequency and interaction time, we numerically monitor the crossover from Anderson localization to the photoeffect in the atomic ionization signal.
  • We report on a study of charge transport through superconductor-insulator-superconductor and normal metal{endash}insulator{endash}superconductor structures (SIS and NIS junctions, respectively) where the insulator is of the Anderson type. Devices which are characterized by a junction resistance larger than 10 k{Omega} show behavior which is typical of Giaever tunnel junctions. In structures having smaller resistance, several peculiar features are observed. In the SIS junctions, Josephson coupling is detected over distances much larger then the typical insulator localization length. In addition, a series of resistance peaks appears at voltages of 2{Delta}/n, where {Delta} is the superconducting gap. The NIS Junctions exhibit a largemore » resistance dip at subgap bias. We discuss possible interpretations of these findings and suggest that they may result from the presence of high transmission channels through the barrier region. {copyright} {ital 1997} {ital The American Physical Society}« less