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Title: Effect of Growth Temperature and Mask Geometry on Morphology and Photoluminescence of GaN/InGaN Core-Shell Nanowires.

Abstract

Abstract not provided.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1368979
Report Number(s):
SAND2016-5454C
641573
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the EMC held June 22-24, 2016 in Newark, DE.
Country of Publication:
United States
Language:
English

Citation Formats

Brener, Igal, Nami, M, Eller, Rhett, Okur, Serdal, Liu, Sheng, and Feezel, Daniel. Effect of Growth Temperature and Mask Geometry on Morphology and Photoluminescence of GaN/InGaN Core-Shell Nanowires.. United States: N. p., 2016. Web.
Brener, Igal, Nami, M, Eller, Rhett, Okur, Serdal, Liu, Sheng, & Feezel, Daniel. Effect of Growth Temperature and Mask Geometry on Morphology and Photoluminescence of GaN/InGaN Core-Shell Nanowires.. United States.
Brener, Igal, Nami, M, Eller, Rhett, Okur, Serdal, Liu, Sheng, and Feezel, Daniel. Wed . "Effect of Growth Temperature and Mask Geometry on Morphology and Photoluminescence of GaN/InGaN Core-Shell Nanowires.". United States. https://www.osti.gov/servlets/purl/1368979.
@article{osti_1368979,
title = {Effect of Growth Temperature and Mask Geometry on Morphology and Photoluminescence of GaN/InGaN Core-Shell Nanowires.},
author = {Brener, Igal and Nami, M and Eller, Rhett and Okur, Serdal and Liu, Sheng and Feezel, Daniel},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {6}
}

Conference:
Other availability
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