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Title: Two-step narrow ridge cascade diode lasers emitting near $$2~\mu$$ m

Abstract

Nearly diffraction limited GaSb-based type-I quantum well cascade diode lasers emitting in the spectral region 1.95-2 μm were designed and fabricated. Two-step 5.5-μm-wide shallow and 14-μm-wide deep etched ridge waveguide design yielded devices generating stable single lobe beams with 250 mW of continuous wave output power at 20 °C. Quantum well radiative recombination current contributes about 13% to laser threshold as estimated from true spontaneous emission and modal gain analysis. Here, recombination at etched sidewalls of the 14-μmwide deep ridges controls about 30% of the threshold.

Authors:
ORCiD logo [1];  [1];  [1];  [2];  [1];  [1]
  1. State Univ. of New York at Stony Brook, Stony Brook, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1368667
Report Number(s):
BNL-113990-2017-JA
Journal ID: ISSN 1041-1135; KC0403020
Grant/Contract Number:  
SC00112704
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
IEEE Photonics Technology Letters
Additional Journal Information:
Journal Volume: 29; Journal Issue: 6; Journal ID: ISSN 1041-1135
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; waveguide lasers; quantum cascade lasers; optical waveguides; laser modes; measurement by laser beam; current density; Center for Functional Nanomaterials; infrared; type-I quantum well; GaSb-based; cascade pumping; diffraction limited beam

Citation Formats

Feng, Tao, Hosoda, Takashi, Shterengas, Leon, Stein, Aaron, Kipshidze, Gela, and Belenky, Gregory. Two-step narrow ridge cascade diode lasers emitting near $2~\mu$ m. United States: N. p., 2017. Web. doi:10.1109/LPT.2016.2647442.
Feng, Tao, Hosoda, Takashi, Shterengas, Leon, Stein, Aaron, Kipshidze, Gela, & Belenky, Gregory. Two-step narrow ridge cascade diode lasers emitting near $2~\mu$ m. United States. doi:10.1109/LPT.2016.2647442.
Feng, Tao, Hosoda, Takashi, Shterengas, Leon, Stein, Aaron, Kipshidze, Gela, and Belenky, Gregory. Mon . "Two-step narrow ridge cascade diode lasers emitting near $2~\mu$ m". United States. doi:10.1109/LPT.2016.2647442. https://www.osti.gov/servlets/purl/1368667.
@article{osti_1368667,
title = {Two-step narrow ridge cascade diode lasers emitting near $2~\mu$ m},
author = {Feng, Tao and Hosoda, Takashi and Shterengas, Leon and Stein, Aaron and Kipshidze, Gela and Belenky, Gregory},
abstractNote = {Nearly diffraction limited GaSb-based type-I quantum well cascade diode lasers emitting in the spectral region 1.95-2 μm were designed and fabricated. Two-step 5.5-μm-wide shallow and 14-μm-wide deep etched ridge waveguide design yielded devices generating stable single lobe beams with 250 mW of continuous wave output power at 20 °C. Quantum well radiative recombination current contributes about 13% to laser threshold as estimated from true spontaneous emission and modal gain analysis. Here, recombination at etched sidewalls of the 14-μmwide deep ridges controls about 30% of the threshold.},
doi = {10.1109/LPT.2016.2647442},
journal = {IEEE Photonics Technology Letters},
number = 6,
volume = 29,
place = {United States},
year = {Mon Jan 02 00:00:00 EST 2017},
month = {Mon Jan 02 00:00:00 EST 2017}
}

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Cited by: 2 works
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