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Title: Two-step narrow ridge cascade diode lasers emitting near $$2~\mu$$ m

Abstract

Nearly diffraction limited GaSb-based type-I quantum well cascade diode lasers emitting in the spectral region 1.95-2 μm were designed and fabricated. Two-step 5.5-μm-wide shallow and 14-μm-wide deep etched ridge waveguide design yielded devices generating stable single lobe beams with 250 mW of continuous wave output power at 20 °C. Quantum well radiative recombination current contributes about 13% to laser threshold as estimated from true spontaneous emission and modal gain analysis. Here, recombination at etched sidewalls of the 14-μmwide deep ridges controls about 30% of the threshold.

Authors:
ORCiD logo [1];  [1];  [1];  [2];  [1];  [1]
  1. State Univ. of New York at Stony Brook, Stony Brook, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1368667
Report Number(s):
BNL-113990-2017-JA
Journal ID: ISSN 1041-1135; KC0403020
Grant/Contract Number:
SC00112704
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
IEEE Photonics Technology Letters
Additional Journal Information:
Journal Volume: 29; Journal Issue: 6; Journal ID: ISSN 1041-1135
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; waveguide lasers; quantum cascade lasers; optical waveguides; laser modes; measurement by laser beam; current density; Center for Functional Nanomaterials; infrared; type-I quantum well; GaSb-based; cascade pumping; diffraction limited beam

Citation Formats

Feng, Tao, Hosoda, Takashi, Shterengas, Leon, Stein, Aaron, Kipshidze, Gela, and Belenky, Gregory. Two-step narrow ridge cascade diode lasers emitting near $2~\mu$ m. United States: N. p., 2017. Web. doi:10.1109/LPT.2016.2647442.
Feng, Tao, Hosoda, Takashi, Shterengas, Leon, Stein, Aaron, Kipshidze, Gela, & Belenky, Gregory. Two-step narrow ridge cascade diode lasers emitting near $2~\mu$ m. United States. doi:10.1109/LPT.2016.2647442.
Feng, Tao, Hosoda, Takashi, Shterengas, Leon, Stein, Aaron, Kipshidze, Gela, and Belenky, Gregory. Mon . "Two-step narrow ridge cascade diode lasers emitting near $2~\mu$ m". United States. doi:10.1109/LPT.2016.2647442. https://www.osti.gov/servlets/purl/1368667.
@article{osti_1368667,
title = {Two-step narrow ridge cascade diode lasers emitting near $2~\mu$ m},
author = {Feng, Tao and Hosoda, Takashi and Shterengas, Leon and Stein, Aaron and Kipshidze, Gela and Belenky, Gregory},
abstractNote = {Nearly diffraction limited GaSb-based type-I quantum well cascade diode lasers emitting in the spectral region 1.95-2 μm were designed and fabricated. Two-step 5.5-μm-wide shallow and 14-μm-wide deep etched ridge waveguide design yielded devices generating stable single lobe beams with 250 mW of continuous wave output power at 20 °C. Quantum well radiative recombination current contributes about 13% to laser threshold as estimated from true spontaneous emission and modal gain analysis. Here, recombination at etched sidewalls of the 14-μmwide deep ridges controls about 30% of the threshold.},
doi = {10.1109/LPT.2016.2647442},
journal = {IEEE Photonics Technology Letters},
number = 6,
volume = 29,
place = {United States},
year = {Mon Jan 02 00:00:00 EST 2017},
month = {Mon Jan 02 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
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Citation Metrics:
Cited by: 2works
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  • High-power two-stage cascade GaSb-based type-I quantum well diode lasers emitting near 2 μm were designed and fabricated. Coated devices with cavity length of 3 mm generated about 2 W of continuous wave power from 100-μm-wide aperture at the current of 6 A. The power conversion efficiency peaked at 20%. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Design optimization eliminated parasitic optical absorption and thermionic emission, and included modification of the InAs quantum wells of electron and composition and doping profile of hole injectors. Utilization of the cascade pumpingmore » scheme yielded 2 μm lasers with improved output power and efficiency compared to existing state-of-the-art diodes.« less
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