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Title: Single Ion Materials Science.


Abstract not provided.

Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
Report Number(s):
DOE Contract Number:
Resource Type:
Resource Relation:
Conference: Proposed for presentation at the IUMRS - International Conference on Electronic Materials 2016 held July 4-8, 2016 in Singapore, Singapore.
Country of Publication:
United States

Citation Formats

Custer, Jonathan S. Single Ion Materials Science.. United States: N. p., 2016. Web.
Custer, Jonathan S. Single Ion Materials Science.. United States.
Custer, Jonathan S. Fri . "Single Ion Materials Science.". United States. doi:.
title = {Single Ion Materials Science.},
author = {Custer, Jonathan S.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jul 01 00:00:00 EDT 2016},
month = {Fri Jul 01 00:00:00 EDT 2016}

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  • Abstract not provided.
  • Papers are presented on energy deposition, heat flow, and rapid solidification during pulsed-laser and electron-beam irradiation of materials; the kinetics of resolidification; atomic displacement processes in ion-irradiated materials; and solute redistribution under nonequilibrium conditions. Consideration is given to microstructures of surface-melted alloys; solute trapping in ion-implanted metals; the superconducting effects of surface alloying by ion, electron, and laser beams; and the mechanical effects of ion beams on surface alloys. Topics discussed include the chemical effects of ion implantation, in particular oxidation, corrosion, and catalysis; laser and electron beams; industrial applications of ion beam processes; and the surface alloying of largemore » and complex shapes.« less
  • Ion beam processing, including ion implantation and ion beam assisted deposition (IBAD), are established surface modification techniques which have been used successfully to synthesize materials for a wide variety of tribological applications. In spite of the flexibility and promise of the technique, ion beam processing has been considered too expensive for mass production applications. However, an emerging technology, Plasma Source Ion Implantation (PSII), has the potential of overcoming these limitations to become an economically viable tool for mass industrial applications. In PSII, targets are placed directly in a plasma and then pulsed-biased to produce a non-line-of-sight process for intricate targetmore » geometries without complicated fixturing. If the bias is a relatively high negative potential (20--100 kV) ion implantation will result. At lower voltages (50--1,200 V), deposition occurs. Potential applications for PSII are in low-value-added products such as tools used in manufacturing, orthopedic devices, and the production of wear coatings for hard disk media. This paper will focus on the technology and materials science associated with PSII.« less
  • We describe results from highly ion extraction experiments at the Electron Beam Ion Trap (EBIT) facility which is now operated at Lawrence Berkeley National Laboratory after transfer from Lawrence Livermore National Laboratory. Requirements on ion source performance for the application of highly charged ions (e. g. Xe{sup 44+}) in surface analysis and materials science are discussed.
  • Work is reported in these areas: Nanopore studies; Ion sculpting of metals; High energy ion sculpting; Metrology of nanopores with single wall carbon nanotube probes; Capturing molecules in a nanopore; Strand separation in a nanopore; and DNA molecules and configurations in solid-state nanopores.