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Title: Changes in charge density vs changes in formal oxidation states: The case of Sn halide perovskites and their ordered vacancy analogues

Authors:
; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1368433
Grant/Contract Number:  
EE0007366; SC0012541; AC02-05CH11231; SC0010467
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Name: Physical Review Materials Journal Volume: 1 Journal Issue: 2; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Dalpian, Gustavo M., Liu, Qihang, Stoumpos, Constantinos C., Douvalis, Alexios P., Balasubramanian, Mahalingam, Kanatzidis, Mercouri G., and Zunger, Alex. Changes in charge density vs changes in formal oxidation states: The case of Sn halide perovskites and their ordered vacancy analogues. United States: N. p., 2017. Web. doi:10.1103/PhysRevMaterials.1.025401.
Dalpian, Gustavo M., Liu, Qihang, Stoumpos, Constantinos C., Douvalis, Alexios P., Balasubramanian, Mahalingam, Kanatzidis, Mercouri G., & Zunger, Alex. Changes in charge density vs changes in formal oxidation states: The case of Sn halide perovskites and their ordered vacancy analogues. United States. doi:10.1103/PhysRevMaterials.1.025401.
Dalpian, Gustavo M., Liu, Qihang, Stoumpos, Constantinos C., Douvalis, Alexios P., Balasubramanian, Mahalingam, Kanatzidis, Mercouri G., and Zunger, Alex. Wed . "Changes in charge density vs changes in formal oxidation states: The case of Sn halide perovskites and their ordered vacancy analogues". United States. doi:10.1103/PhysRevMaterials.1.025401.
@article{osti_1368433,
title = {Changes in charge density vs changes in formal oxidation states: The case of Sn halide perovskites and their ordered vacancy analogues},
author = {Dalpian, Gustavo M. and Liu, Qihang and Stoumpos, Constantinos C. and Douvalis, Alexios P. and Balasubramanian, Mahalingam and Kanatzidis, Mercouri G. and Zunger, Alex},
abstractNote = {},
doi = {10.1103/PhysRevMaterials.1.025401},
journal = {Physical Review Materials},
number = 2,
volume = 1,
place = {United States},
year = {Wed Jul 05 00:00:00 EDT 2017},
month = {Wed Jul 05 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevMaterials.1.025401

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Works referenced in this record:

Air-Stable Molecular Semiconducting Iodosalts for Solar Cell Applications: Cs2SnI6 as a Hole Conductor
journal, October 2014

  • Lee, Byunghong; Stoumpos, Constantinos C.; Zhou, Nanjia
  • Journal of the American Chemical Society, Vol. 136, Issue 43, p. 15379-15385
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CsSnI3 : Semiconductor or Metal? High Electrical Conductivity and Strong Near-Infrared Photoluminescence from a Single Material. High Hole Mobility and Phase-Transitions
journal, May 2012

  • Chung, In; Song, Jung-Hwan; Im, Jino
  • Journal of the American Chemical Society, Vol. 134, Issue 20, p. 8579-8587
  • DOI: 10.1021/ja301539s