Anomalous Surface Doping Effect in Semiconductor Nanowires

Wang, Yuejian; Yang, Wenge; Zou, Guifu; Wu, Ji; Coffer, Jeffery L.; Sinogeikin, Stanislav V.; Zhang, Jianzhong

doi:10.1021/acs.jpcc.7b01655

Title: Anomalous Surface Doping Effect in Semiconductor Nanowires

Journal Article · Mon May 01 00:00:00 EDT 2017 · Journal of Physical Chemistry. C

DOI:https://doi.org/10.1021/acs.jpcc.7b01655· OSTI ID:1368340

^[1]; Yang, Wenge ^[2];

^[3]; Wu, Ji ^[4]; Coffer, Jeffery L. ^[5]; Sinogeikin, Stanislav V. ^[6]; Zhang, Jianzhong ^[7]

Oakland Univ., Rochester, MI (United States)
Center for High Pressure Science and Technology Advanced Research, Shanghai (China); Carnegie Inst. of Washington, Argonne, IL (United States)
Soochow Univ., Jiangsu (China)
Georgia Southern Univ., Statesboro, GA (United States)
Texas Christian Univ., Fort Worth, TX (United States)
Carnegie Inst. of Washington, Argonne, IL (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Surface doping is being used as an effective approach to improve the mechanical, optical, electronic, and magnetic properties of various materials. For example, experimental studies have proven that rare-earth element doping can enhance the optical properties of silicon nanostructures. However, the majority of previous investigations focused on either bulk materials or nanosized spherical crystals. Here we present a comparative study on semiconducting germanium (Ge) nanowires with and without surface doping by using multiple integrated characterization probes, including high resolution scanning/transmission electron microscopy (SEM/TEM), in situ high pressure synchrotron X-ray diffraction (XRD), and Raman spectroscopy. Our results reveal that under pressure the stability of the Ge-I phase (diamond structure) in erbium (Er)-doped Ge nanowires is enhanced compared to undoped Ge nanowires. We also found an increased stability of the Ge-II phase (body centered tetragonal structure) in Er-doped Ge nanowires during decompression. Furthermore, the presence of Er doping elevates the transition kinetics by showing a smaller pressure span needed for a complete Ge-I to Ge-II phase transformation. In contrast, Er doping has a negligible impact on the mechanical properties of Ge nanowires under high pressure, exhibiting a very different mechanical behavior from other foreign element-doped nanostructures. This anomalous doping effect was explained based on surface modification and decoration. Furthermore, these findings are of both fundamental and applied significance, because they not only provide a thorough understanding of the distinct role of surface doping in nanoscale materials, but also yield insight with regard to a given material’s design for favorable properties in semiconductor nanostructures.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF); Robert A. Welch

Grant/Contract Number:: AC02-06CH11357; NA0001974; P-1212

OSTI ID:: 1368340

Journal Information:: Journal of Physical Chemistry. C, Vol. 121, Issue 21; ISSN 1932-7447

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: ENGLISH

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Cited by: 6 works

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Title: Anomalous Surface Doping Effect in Semiconductor Nanowires

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