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Title: The Role of Structural and Compositional Heterogeneities in the Insulator-to-Metal Transition in Hole-Doped APd 3 O 4 (A = Ca, Sr)

Authors:
; ORCiD logo; ; ; ; ORCiD logo; ORCiD logo
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
National Science Foundation (NSF)
OSTI Identifier:
1368323
Resource Type:
Journal Article
Resource Relation:
Journal Name: Inorganic Chemistry; Journal Volume: 56; Journal Issue: 9
Country of Publication:
United States
Language:
ENGLISH

Citation Formats

Lamontagne, Leo K., Laurita, Geneva, Knight, Michael, Yusuf, Huma, Hu, Jerry, Seshadri, Ram, and Page, Katharine. The Role of Structural and Compositional Heterogeneities in the Insulator-to-Metal Transition in Hole-Doped APd 3 O 4 (A = Ca, Sr). United States: N. p., 2017. Web. doi:10.1021/acs.inorgchem.7b00307.
Lamontagne, Leo K., Laurita, Geneva, Knight, Michael, Yusuf, Huma, Hu, Jerry, Seshadri, Ram, & Page, Katharine. The Role of Structural and Compositional Heterogeneities in the Insulator-to-Metal Transition in Hole-Doped APd 3 O 4 (A = Ca, Sr). United States. doi:10.1021/acs.inorgchem.7b00307.
Lamontagne, Leo K., Laurita, Geneva, Knight, Michael, Yusuf, Huma, Hu, Jerry, Seshadri, Ram, and Page, Katharine. Thu . "The Role of Structural and Compositional Heterogeneities in the Insulator-to-Metal Transition in Hole-Doped APd 3 O 4 (A = Ca, Sr)". United States. doi:10.1021/acs.inorgchem.7b00307.
@article{osti_1368323,
title = {The Role of Structural and Compositional Heterogeneities in the Insulator-to-Metal Transition in Hole-Doped APd 3 O 4 (A = Ca, Sr)},
author = {Lamontagne, Leo K. and Laurita, Geneva and Knight, Michael and Yusuf, Huma and Hu, Jerry and Seshadri, Ram and Page, Katharine},
abstractNote = {},
doi = {10.1021/acs.inorgchem.7b00307},
journal = {Inorganic Chemistry},
number = 9,
volume = 56,
place = {United States},
year = {Thu Apr 13 00:00:00 EDT 2017},
month = {Thu Apr 13 00:00:00 EDT 2017}
}
  • The electrical resistivity of the perovskite-types (Nd[sub 0.1]Ca[sub 0.9])(Mn[sub 1[minus]x]Al[sub x])O[sub 3] (0 [le] x [le] 0.10) and (Nd[sub 0.1[minus]y]Ca[sub 0.9+y])MnO[sub 3] (0 [le] y [le] 0.06) was measured in the temperature range 80-800 K. The concentration of the Mn[sup 3+] ion decreases with increasing x or y. In the range 0 [le] x or y [le] 0.06, these systems exhibit the metal-insulator transition. In the metallic region, dp/dT increases with decreasing concentration of the Mn[sup 3+] ion, and is not affected by the Al[sup 3+] ion. On the other hand, both the metal-insulator transition temperature (T[sub t]) and themore » energy gap (E[sub g]) calculated from the semiconductive region increase with decreased Mn[sup 3+] concentration, and are also affected by the Al[sup 3+] ion.« less
  • Ca-free single crystal and polycrystalline samples of Pb[sub 2]Sr[sub 2]RCu[sub 3]O[sub 8] have been prepared by a PbO/NaCl flux growth method and a fast solid state reaction, respectively. The electronic character of the single crystals of this series can be roughly categorized into three groups: insulating (no carrier doping in the CuO[sub 2] planes) for R = La, Ce, Pr, and Nd, semiconducting for R = Sm, Eu, Gd, and Tb, and poorly metallic for R = Dy, Ho, and Y. Crystals with R = Eu to Ho are found to be superconducting with the exception of Tb. The metallicmore » character in these crystals is likely promoted by a cation vacancy at the rare-earth sites which has been established by crystal structural and chemical analyses. The anomalous behavior of the Tb crystals may originate from a lower dopant level as inferred from the structure determination or possibly from the presence of Tb[sup 4+]. The fact that metallic behavior is observed in nonstoichiometric polycrystalline samples and not in stoichiometric ones seems consistent with the cation vacancy carrier doping mechanism. 22 refs., 7 figs., 4 tabs.« less
  • Perovskite-type (La{sub 0.1}Ca{sub 0.9})(Mn{sub 1-x}Ti{sub x})O{sub 3} (0 {le} x {le} 0.9) has the orthorhombic GdFeO{sub 3}-type structure with the space group Pnma. With increasing x, the average (Mn, Ti)-O distance increases linearly and the average angles for (Mn,Ti)-O-(Mn, Ti) decrease slightly. The electrical resistivity ({rho}) of all manganates was measured in the temperature range from 10 to 953 K. All manganates are n-type semiconductors at low temperature. At high temperature, the manganates exhibit a metal-insulator transition in the range O{le}x{le}0.3. d{rho}/dT in the metallic region depends on the composition. From these results, it is considered that the Ti{sup 4+}more » ion makes the cation-anion-cation overlap integrals ({Delta}{sub cac}{sup {pi}} and {Delta}{sub cac}{sup {sigma}}) weaken.« less
  • The authors have studied the structural and microstructural changes of Bi{sub 4}Sr{sub 3}Ca{sub 3}Cu{sub 4}O{sub 16+x} on annealing close to its melting point and correlated these with the thermal stability and the electrical properties. Thermal analyses suggest that the Bi{sub 4}Sr{sub 3}Ca{sub 3}Cu{sub 4}O{sub 16+x} phase undergoes a peritectic or peritectic-like transformation, accompanied by oxygen loss, just before complete melting. This transformation leads to the formation of the Bi{sub 2}Sr{sub 2}Ca{sub 2}Cu{sub 3}O{sub 10} phase as identified by x-ray diffraction (XRD) and confirmed by electrical resistivity measurements. Electron microscopy shows that Bi{sub 4}Sr{sub 3}Ca{sub 3}Cu{sub 4}O{sub 16+x} phase is systematicallymore » observed between this amorphous phase and the transformed regions. Finally, they discuss the consequences of this transformation on electrical properties and on the conditions required for the preparation of a pure Bi{sub 2}Sr{sub 2}Ca{sub 2}Cu{sub 3}O{sub 10} phase.« less
  • The physics of doped Mott insulators remains controversial after decades of active research, hindered by the interplay among competing orders and fluctuations. It is thus highly desired to distinguish the intrinsic characters of the Mott-metal crossover from those of other origins. Here we investigate the evolution of electronic structure and dynamics of the hole-doped pseudospin-1/2 Mott insulator Sr 2 IrO 4 . The effective hole doping is achieved by replacing Ir with Rh atoms, with the chemical potential immediately jumping to or near the top of the lower Hubbard band. The doped iridates exhibit multiple iconic low-energy features previously observedmore » in doped cuprates - pseudogaps, Fermi arcs and marginal-Fermi-liquid-like electronic scattering rates. We suggest these signatures are most likely an integral part of the material's proximity to the Mott state, rather than from many of the most claimed mechanisms, including preformed electron pairing, quantum criticality or density-wave formation.« less