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Title: High-pressure behavior of superconducting boron-doped diamond

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
DOE - BASIC ENERGY SCIENCESDOE-NNSAFOREIGN
OSTI Identifier:
1368295
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 17; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
ENGLISH

Citation Formats

Abdel-Hafiez, Mahmoud, Kumar, Dinesh, Thiyagarajan, R., Zhang, Q., Howie, R. T., Sethupathi, K., Volkova, O., Vasiliev, A., Yang, W., Mao, H. K., and Rao, M. S. Ramachandra. High-pressure behavior of superconducting boron-doped diamond. United States: N. p., 2017. Web. doi:10.1103/physrevb.95.174519.
Abdel-Hafiez, Mahmoud, Kumar, Dinesh, Thiyagarajan, R., Zhang, Q., Howie, R. T., Sethupathi, K., Volkova, O., Vasiliev, A., Yang, W., Mao, H. K., & Rao, M. S. Ramachandra. High-pressure behavior of superconducting boron-doped diamond. United States. doi:10.1103/physrevb.95.174519.
Abdel-Hafiez, Mahmoud, Kumar, Dinesh, Thiyagarajan, R., Zhang, Q., Howie, R. T., Sethupathi, K., Volkova, O., Vasiliev, A., Yang, W., Mao, H. K., and Rao, M. S. Ramachandra. Mon . "High-pressure behavior of superconducting boron-doped diamond". United States. doi:10.1103/physrevb.95.174519.
@article{osti_1368295,
title = {High-pressure behavior of superconducting boron-doped diamond},
author = {Abdel-Hafiez, Mahmoud and Kumar, Dinesh and Thiyagarajan, R. and Zhang, Q. and Howie, R. T. and Sethupathi, K. and Volkova, O. and Vasiliev, A. and Yang, W. and Mao, H. K. and Rao, M. S. Ramachandra},
abstractNote = {},
doi = {10.1103/physrevb.95.174519},
journal = {Physical Review B},
issn = {2469-9950},
number = 17,
volume = 95,
place = {United States},
year = {2017},
month = {5}
}

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