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Title: A Comparison of Point Defects in Cd 1-xZn xTe 1-ySe y Crystals Grown by Bridgman and Traveling Heater Methods

Abstract

In this study, the properties of point defects in Cd 1–xZn xTe 1–ySe y (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the V Cd concentration. In Travelling Heater Method (THM) and Bridgman Method (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of V Cd and two additional traps (attributed to Te i and Te Cd ++ appearing at around E v + 0.26 eV and E c – 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects ofmore » point defects induced due to different processing techniques on the detector's resistivity, spectral response to gammas, and μτ product were determined.« less

Authors:
 [1];  [2];  [2];  [2];  [2];  [2];  [3];  [3];  [4]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States); Alabama A&M Univ., Normal, AL (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States); Savannah River National Lab., Aiken, SC (United States)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Savannah River Site (SRS), Aiken, SC (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1367976
Alternate Identifier(s):
OSTI ID: 1406493
Report Number(s):
LLNL-JRNL-718467; SRNL-STI-2017-00152
Journal ID: ISSN 0021-8979
Grant/Contract Number:  
AC52-07NA27344; AC09-08SR22470
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 121; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CdZnTeSe; point defects; carrier trapping; iDLTS; deep levels; radiation detectors; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Gul, R., Roy, U. N., Camarda, G. S., Hossain, A., Yang, G., Vanier, P., Varley, J., Lordi, V., and James, R. B.. A Comparison of Point Defects in Cd1-xZnxTe1-ySey Crystals Grown by Bridgman and Traveling Heater Methods. United States: N. p., 2017. Web. doi:10.1063/1.4979012.
Gul, R., Roy, U. N., Camarda, G. S., Hossain, A., Yang, G., Vanier, P., Varley, J., Lordi, V., & James, R. B.. A Comparison of Point Defects in Cd1-xZnxTe1-ySey Crystals Grown by Bridgman and Traveling Heater Methods. United States. doi:10.1063/1.4979012.
Gul, R., Roy, U. N., Camarda, G. S., Hossain, A., Yang, G., Vanier, P., Varley, J., Lordi, V., and James, R. B.. Tue . "A Comparison of Point Defects in Cd1-xZnxTe1-ySey Crystals Grown by Bridgman and Traveling Heater Methods". United States. doi:10.1063/1.4979012. https://www.osti.gov/servlets/purl/1367976.
@article{osti_1367976,
title = {A Comparison of Point Defects in Cd1-xZnxTe1-ySey Crystals Grown by Bridgman and Traveling Heater Methods},
author = {Gul, R. and Roy, U. N. and Camarda, G. S. and Hossain, A. and Yang, G. and Vanier, P. and Varley, J. and Lordi, V. and James, R. B.},
abstractNote = {In this study, the properties of point defects in Cd1–xZnxTe1–ySey (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the VCd– concentration. In Travelling Heater Method (THM) and Bridgman Method (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of VCd– and two additional traps (attributed to Tei– and TeCd++ appearing at around Ev + 0.26 eV and Ec – 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral response to gammas, and μτ product were determined.},
doi = {10.1063/1.4979012},
journal = {Journal of Applied Physics},
number = ,
volume = 121,
place = {United States},
year = {Tue Mar 28 00:00:00 EDT 2017},
month = {Tue Mar 28 00:00:00 EDT 2017}
}

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