Crystallization kinetics of the phase change material GeSb6Te measured with dynamic transmission electron microscopy
- Oregon State Univ., Corvallis, OR (United States)
- Macronix International Co., Ltd., Hsinchu (Taiwan)
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
GeSb6Te is a chalcogenide-based phase change material that has shown great ptoential for use in solid-state memory devices. The crystallization kinetics of amorphous thin films of GeSb6Te during laser crystallization were followed with dynamic transmission electron microscopy, a photo-emission electron microscopy technique with nanosecond-scale time resolution. Nine-frame movies of crystal growth were taken during laser crystallization. The nucleation rate is observed to be very low and the growth rates are very high, up to 10.8 m s–1 for amorphous as-deposited films and significantly higher for an amorphous film subject to sub-threshold laser annealing before crystallization. The measured growth rates exceed any directly measured growth rate of a phase change material. Here, the crystallization is reminiscent of explosive crystallization of elemental semiconductors both in the magnitude of the growth rate and in the resulting crystalline microstructures.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- AC52-07NA27344
- OSTI ID:
- 1367973
- Report Number(s):
- LLNL-JRNL-681060; ICHBD9
- Journal Information:
- Dalton Transactions, Vol. 45, Issue 24; ISSN 1477-9226
- Publisher:
- Royal Society of ChemistryCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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