Electrical resistivity of solid and liquid Cu up to 5 GPa: Decrease along the melting boundary
The electrical resistivity of high purity Cu has been investigated by both experiments and first principle calculations at pressures up to 5 GPa and at temperatures in the liquid phase up to 1730 K. The resistivity decreases with P and increases with T and our data are in very good agreement in relation to 1 atm data. Our melting temperature data agree with other experimental studies. We show that resistivity of Cu decreases along the P,T-dependent melting boundary in disagreement with prediction of resistivity invariance along the melting boundary. These findings are interpreted in terms of the competing effects of P and T on the electronic structure of liquid Cu. The electronic thermal conductivity is calculated from resistivity data using the Wiedemann-Franz law and is shown to increase with P in both the solid and liquid states but upon T increase, it decreases in the solid and increases in the liquid state.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Oak Ridge Leadership Computing Facility (OLCF); UT-Battelle LLC/ORNL, Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- Grant/Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1367930
- Alternate ID(s):
- OSTI ID: 1565657
- Journal Information:
- Journal of Physics and Chemistry of Solids, Journal Name: Journal of Physics and Chemistry of Solids Vol. 110 Journal Issue: C; ISSN 0022-3697
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United Kingdom
- Language:
- English
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