Messier: A Detailed NVM-Based DIMM Model for the SST Simulation Framework.
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
DRAM technology is the main building block of main memory, however, DRAM scaling is becoming very challenging. The main issues for DRAM scaling are the increasing error rates with each new generation, the geometric and physical constraints of scaling the capacitor part of the DRAM cells, and the high power consumption caused by the continuous need for refreshing cell values. At the same time, emerging Non- Volatile Memory (NVM) technologies, such as Phase-Change Memory (PCM), are emerging as promising replacements for DRAM. NVMs, when compared to current technologies e.g., NAND-based ash, have latencies comparable to DRAM. Additionally, NVMs are non-volatile, which eliminates the need for refresh power and enables persistent memory applications. Finally, NVMs have promising densities and the potential for multi-level cell (MLC) storage.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1367483
- Report Number(s):
- SAND--2017-1830; 654070
- Country of Publication:
- United States
- Language:
- English
Similar Records
A Compute Capable SSD Architecture for Next-Generation Non-volatile Memories
Blackcomb: Hardware-Software Co-design for Non-Volatile Memory in Exascale Systems