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Title: Creating Facets in Photoresist Using Plasma Etch Processing.

Abstract

Abstract not provided.

Authors:
;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1367196
Report Number(s):
SAND2017-5151C
653325
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the American Vacuum Society Spring Symposium held May 15-19, 2017 in Albuquerque, NM, US.
Country of Publication:
United States
Language:
English

Citation Formats

Sovey, Erin Lynn, and Bauer, Todd. Creating Facets in Photoresist Using Plasma Etch Processing.. United States: N. p., 2017. Web.
Sovey, Erin Lynn, & Bauer, Todd. Creating Facets in Photoresist Using Plasma Etch Processing.. United States.
Sovey, Erin Lynn, and Bauer, Todd. Mon . "Creating Facets in Photoresist Using Plasma Etch Processing.". United States. doi:. https://www.osti.gov/servlets/purl/1367196.
@article{osti_1367196,
title = {Creating Facets in Photoresist Using Plasma Etch Processing.},
author = {Sovey, Erin Lynn and Bauer, Todd},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon May 01 00:00:00 EDT 2017},
month = {Mon May 01 00:00:00 EDT 2017}
}

Conference:
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  • Results of several experiments aimed at remedying photoresist adhesion failure during spray wet chemical etching of InGaP/GaAs NPN HBTs are reported. Several factors were identified that could influence adhesion and a Design of Experiment (DOE) approach was used to study the effects and interactions of selected factors. The most significant adhesion improvement identified is the incorporation of a native oxide etch immediately prior to the photoresist coat. In addition to improving adhesion, this pre-coat treatment also alters the wet etch profile of (100) GaAs so that the reaction limited etch is more isotropic compared to wafers without surface treatment; themore » profiles have a positive taper in both the [011] and [011] directions, but the taper angles are not identical. The altered profiles have allowed us to predictably yield fully probe-able HBTs with 5 x 5 {micro}m emitters using 5200 {angstrom} evaporated metal without planarization.« less
  • Abstract not provided.
  • Steady state species compositions in etching reactors are determined by solving species, mass, and electron-energy balance equations. The electron-energy equation includes a detailed power balance with losses to ions and electrons through the sheath, as well as inelastic and elastic collision losses. The reactors are assumed to be perfectly stirred in order to reduce the computational expense and emphasize the dependence of chemistry on etch-process parameters. Well-stirred reactors are characterized by a reactor geometry, net fluid flow or residence time, pressure, energy loss, power deposition, surface area, and inlet-gas composition. Results show dependence of species composition in the etch chambermore » (including ion, electron, and neutral radical concentrations) on the parameters characterizing the reactor. Studies of chlorine and oxygen plasmas indicate increased electronegativity with pressure and inlet flow rate. Both oxygen and chlorine molecules dissociate rapidly, although the dependence of this result on assumed atomic wall-sticking coefficients is significant. Comparison of results to experimental data support trends predicted by the well-stirred reactor model. The plasma-kinetic rate coefficients are obtained from both Maxwellian and Boltzmann electron energy distribution functions, with a comparison of these two approaches.« less
  • The Focused-Ion-Beam (FIB) is a powerful tool for fast, precision cross-sectioning and inspection of submicron defects in multilayered integrated circuit devices. However, the low contrast between the layers in FIB cross-sections can make the feature of interest difficult to observe, which has become a limitation for FIB cross-sectioning. A technique using plasma etch to decorate the FIB cross-sections has proven to be a simple solution to overcome this limitation.
  • High rate etching of through-substrate via holes are essential to many GaAs electronic and photonic device applications. The backside via holes are relevant to monolithic microwave integrated circuits for low inductance grounding and increased circuit complexity. Via holes have also become important to photonic devices such as transmission modulators and vertical cavity surface emitting lasers (VCSELs) fabricated on absorbing substrates. We have investigated and compared reactive ion etch (RIE) and electron cyclotron resonance (ECR) etch results for GaAs via holes patterned with either photodefinable polyimide masks or conventional thick photoresist masks. We report GaAs etch rates for 5 min plasmamore » exposures of {approximately}8000 nm/min in a RIE-generated Cl{sub 2}/BCl{sub 3}/SiCl{sub 4} plasma and {approximately}3200 nm/min in a Cl{sub 2}/BCl{sub 3} ECR-generated plasma. {copyright} {ital 1997 American Vacuum Society.}« less