Application of Focused Ion Beam Irradiations to Create Electroforming-Free TaOx Memristors.
Abstract
Abstract not provided.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1366820
- Report Number(s):
- SAND2016-5806C
642212
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Conference
- Resource Relation:
- Conference: Proposed for presentation at the 58th Electronic Materials Conference held June 22-24, 2016 in Newark, Delaware.
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Pacheco, Jose L, Hughart, David Russell, Vizkelethy, Gyorgy, Bielejec, Edward S., and Marinella, Matthew. Application of Focused Ion Beam Irradiations to Create Electroforming-Free TaOx Memristors.. United States: N. p., 2016.
Web.
Pacheco, Jose L, Hughart, David Russell, Vizkelethy, Gyorgy, Bielejec, Edward S., & Marinella, Matthew. Application of Focused Ion Beam Irradiations to Create Electroforming-Free TaOx Memristors.. United States.
Pacheco, Jose L, Hughart, David Russell, Vizkelethy, Gyorgy, Bielejec, Edward S., and Marinella, Matthew. 2016.
"Application of Focused Ion Beam Irradiations to Create Electroforming-Free TaOx Memristors.". United States. https://www.osti.gov/servlets/purl/1366820.
@article{osti_1366820,
title = {Application of Focused Ion Beam Irradiations to Create Electroforming-Free TaOx Memristors.},
author = {Pacheco, Jose L and Hughart, David Russell and Vizkelethy, Gyorgy and Bielejec, Edward S. and Marinella, Matthew},
abstractNote = {Abstract not provided.},
doi = {},
url = {https://www.osti.gov/biblio/1366820},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jun 01 00:00:00 EDT 2016},
month = {Wed Jun 01 00:00:00 EDT 2016}
}
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