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Title: Application of Focused Ion Beam Irradiations to Create Electroforming-Free TaOx Memristors.

Abstract

Abstract not provided.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1366820
Report Number(s):
SAND2016-5806C
642212
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 58th Electronic Materials Conference held June 22-24, 2016 in Newark, Delaware.
Country of Publication:
United States
Language:
English

Citation Formats

Pacheco, Jose L, Hughart, David Russell, Vizkelethy, Gyorgy, Bielejec, Edward S., and Marinella, Matthew. Application of Focused Ion Beam Irradiations to Create Electroforming-Free TaOx Memristors.. United States: N. p., 2016. Web.
Pacheco, Jose L, Hughart, David Russell, Vizkelethy, Gyorgy, Bielejec, Edward S., & Marinella, Matthew. Application of Focused Ion Beam Irradiations to Create Electroforming-Free TaOx Memristors.. United States.
Pacheco, Jose L, Hughart, David Russell, Vizkelethy, Gyorgy, Bielejec, Edward S., and Marinella, Matthew. 2016. "Application of Focused Ion Beam Irradiations to Create Electroforming-Free TaOx Memristors.". United States. https://www.osti.gov/servlets/purl/1366820.
@article{osti_1366820,
title = {Application of Focused Ion Beam Irradiations to Create Electroforming-Free TaOx Memristors.},
author = {Pacheco, Jose L and Hughart, David Russell and Vizkelethy, Gyorgy and Bielejec, Edward S. and Marinella, Matthew},
abstractNote = {Abstract not provided.},
doi = {},
url = {https://www.osti.gov/biblio/1366820}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jun 01 00:00:00 EDT 2016},
month = {Wed Jun 01 00:00:00 EDT 2016}
}

Conference:
Other availability
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