skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Underpotential deposition-mediated layer-by-layer growth of thin films

Abstract

A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves electrochemically exchanging a mediating element on a substrate with a noble metal film by alternatingly sweeping potential in forward and reverse directions for a predetermined number of times in an electrochemical cell. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material to be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis.

Inventors:
;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1366730
Patent Number(s):
9,689,085
Application Number:
14/689,708
Assignee:
Brookhaven Science Associates, LLC BNL
DOE Contract Number:
AC02-98CH10886
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Apr 17
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wang, Jia Xu, and Adzic, Radoslav R. Underpotential deposition-mediated layer-by-layer growth of thin films. United States: N. p., 2017. Web.
Wang, Jia Xu, & Adzic, Radoslav R. Underpotential deposition-mediated layer-by-layer growth of thin films. United States.
Wang, Jia Xu, and Adzic, Radoslav R. Tue . "Underpotential deposition-mediated layer-by-layer growth of thin films". United States. doi:. https://www.osti.gov/servlets/purl/1366730.
@article{osti_1366730,
title = {Underpotential deposition-mediated layer-by-layer growth of thin films},
author = {Wang, Jia Xu and Adzic, Radoslav R.},
abstractNote = {A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves electrochemically exchanging a mediating element on a substrate with a noble metal film by alternatingly sweeping potential in forward and reverse directions for a predetermined number of times in an electrochemical cell. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material to be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 27 00:00:00 EDT 2017},
month = {Tue Jun 27 00:00:00 EDT 2017}
}

Patent:

Save / Share:
  • A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves the use of underpotential deposition of a first element to mediate the growth of a second material by overpotential deposition. Deposition occurs between a potential positive to the bulk deposition potential for the mediating element where a full monolayer of mediating element forms, and a potential which is less than, or only slightly greater than, the bulk deposition potential of the material to be deposited. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material tomore » be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis. This process is especially suitable for the formation of a catalytically active layer on core-shell particles for use in energy conversion devices such as fuel cells.« less
  • A method for preparing a metal sulfide thin film using ALD and structures incorporating the metal sulfide thin film. The method includes providing an ALD reactor, a substrate, a first precursor comprising a metal and a second precursor comprising a sulfur compound. The first and the second precursors are reacted in the ALD precursor to form a metal sulfide thin film on the substrate. In a particular embodiment, the metal compound comprises Bis(N,N'-di-sec-butylacetamidinato)dicopper(I) and the sulfur compound comprises hydrogen sulfide (H.sub.2S) to prepare a Cu.sub.2S film. The resulting metal sulfide thin film may be used in among other devices, photovoltaicmore » devices, including interdigitated photovoltaic devices that may use relatively abundant materials for electrical energy production.« less
  • We have fabricated YBa[sub 2]Cu[sub 3]O[sub 7[minus][ital x]] thin films using [ital in] [ital situ] layer-by-layer sputter deposition from metal targets. Yttrium, barium, and copper metals were deposited in the atomic monolayer sequence to construct the perovskite structure in the [001] direction. X-ray diffraction indicates that these films are [ital c]-axis oriented with the [001] direction normal to the film surface. Smooth films with zero-resistance transition temperature [ital T][sub [ital c]0]=80 K and critical current density [ital J][sub [ital c]](4.2 K)[similar to]2[times]10[sup 7] A/cm[sup 2], measured in zero magnetic field, have been grown on LaAlO[sub 3](100) substrates. Under the conditionsmore » studied, all films have a suppressed [ital T][sub [ital c]] and an expanded [ital c]-axis lattice constant, with the degree of [ital T][sub [ital c]] suppression inversely proportional to the lattice constant. [ital T][sub [ital c]] and surface morphology were shown to be sensitive to the fractional monolayer coverage [phi] during each layer's deposition. The results suggest that films grow in the layer-by-layer mode as opposed to island growth.« less
  • Atomic layer deposition (ALD) has become an essential technique for fabricating nano-scale thin films in the microelectronics industry, and its applications have been extended to multicomponent thin films, as well as to single metal oxide and nitride films. A mathematical film growth model for ALD is proposed to predict the deposition characteristics of multicomponent thin films grown mainly in the transient regime, where the film thickness varies nonlinearly with the number of cycles. The nonlinear behavior of the growth rate and the composition of multicomponent thin films deposited by ALD depend on the precursor used and adsorbing surface. Hence, themore » equations to describe the change of surface coverage with precursor adsorption and the surface reaction are derived. The area reduction ratio is introduced as a parameter related to the number of adsorbed precursor molecules per unit area. The proposed model was applied to the deposition of Sr-Ti-O thin films to confirm its validity. SrO and TiO{sub 2} films were grown separately to investigate their ALD characteristics and to extract model parameters. As a result, it was shown that the thickness and composition of Sr-Ti-O films follow the trend predicted by the proposed model.« less