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Title: Evaluation of Alternative Atomistic Models for the Incipient Growth of ZnO by Atomic Layer Deposition

Abstract

ZnO thin films are interesting for applications in several technological fields, including optoelectronics and renewable energies. Nanodevice applications require controlled synthesis of ZnO structures at nanometer scale, which can be achieved via atomic layer deposition (ALD). However, the mechanisms governing the initial stages of ALD had not been addressed until very recently. Investigations into the initial nucleation and growth as well as the atomic structure of the heterointerface are crucial to optimize the ALD process and understand the structure-property relationships for ZnO. We have used a complementary suite of in situ synchrotron x-ray techniques to investigate both the structural and chemical evolution during ZnO growth by ALD on two different substrates, i.e., SiO2 and Al2O3, which led us to formulate an atomistic model of the incipient growth of ZnO. The model relies on the formation of nanoscale islands of different size and aspect ratio and consequent disorder induced in the Zn neighbors' distribution. However, endorsement of our model requires testing and discussion of possible alternative models which could account for the experimental results. In this work, we review, test, and rule out several alternative models; the results confirm our view of the atomistic mechanisms at play, which influence the overallmore » microstructure and resulting properties of the final thin film.« less

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
Agence Nationale de la recherche (ANR); Hanoi University of Science and Technology; USDOE Office of Science - Office of Basic Energy Sciences - Materials Sciences and Engineering Division; Synchrotron SOLEIL
OSTI Identifier:
1366713
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
Journal of Electronic Materials
Additional Journal Information:
Journal Volume: 46; Journal Issue: 6; Journal ID: ISSN 0361-5235
Publisher:
Springer
Country of Publication:
United States
Language:
English
Subject:
ALD; XANES; ZnO; in situ; simulations; synchrotron radiation

Citation Formats

Chu, Manh-Hung, Tian, Liang, Chaker, Ahmad, Skopin, Evgenii, Cantelli, Valentina, Ouled, Toufik, Boichot, Raphaël, Crisci, Alexandre, Lay, Sabine, Richard, Marie-Ingrid, Thomas, Olivier, Deschanvres, Jean-Luc, Renevier, Hubert, Fong, Dillon, and Ciatto, Gianluca. Evaluation of Alternative Atomistic Models for the Incipient Growth of ZnO by Atomic Layer Deposition. United States: N. p., 2017. Web. doi:10.1007/s11664-017-5448-2.
Chu, Manh-Hung, Tian, Liang, Chaker, Ahmad, Skopin, Evgenii, Cantelli, Valentina, Ouled, Toufik, Boichot, Raphaël, Crisci, Alexandre, Lay, Sabine, Richard, Marie-Ingrid, Thomas, Olivier, Deschanvres, Jean-Luc, Renevier, Hubert, Fong, Dillon, & Ciatto, Gianluca. Evaluation of Alternative Atomistic Models for the Incipient Growth of ZnO by Atomic Layer Deposition. United States. https://doi.org/10.1007/s11664-017-5448-2
Chu, Manh-Hung, Tian, Liang, Chaker, Ahmad, Skopin, Evgenii, Cantelli, Valentina, Ouled, Toufik, Boichot, Raphaël, Crisci, Alexandre, Lay, Sabine, Richard, Marie-Ingrid, Thomas, Olivier, Deschanvres, Jean-Luc, Renevier, Hubert, Fong, Dillon, and Ciatto, Gianluca. 2017. "Evaluation of Alternative Atomistic Models for the Incipient Growth of ZnO by Atomic Layer Deposition". United States. https://doi.org/10.1007/s11664-017-5448-2.
@article{osti_1366713,
title = {Evaluation of Alternative Atomistic Models for the Incipient Growth of ZnO by Atomic Layer Deposition},
author = {Chu, Manh-Hung and Tian, Liang and Chaker, Ahmad and Skopin, Evgenii and Cantelli, Valentina and Ouled, Toufik and Boichot, Raphaël and Crisci, Alexandre and Lay, Sabine and Richard, Marie-Ingrid and Thomas, Olivier and Deschanvres, Jean-Luc and Renevier, Hubert and Fong, Dillon and Ciatto, Gianluca},
abstractNote = {ZnO thin films are interesting for applications in several technological fields, including optoelectronics and renewable energies. Nanodevice applications require controlled synthesis of ZnO structures at nanometer scale, which can be achieved via atomic layer deposition (ALD). However, the mechanisms governing the initial stages of ALD had not been addressed until very recently. Investigations into the initial nucleation and growth as well as the atomic structure of the heterointerface are crucial to optimize the ALD process and understand the structure-property relationships for ZnO. We have used a complementary suite of in situ synchrotron x-ray techniques to investigate both the structural and chemical evolution during ZnO growth by ALD on two different substrates, i.e., SiO2 and Al2O3, which led us to formulate an atomistic model of the incipient growth of ZnO. The model relies on the formation of nanoscale islands of different size and aspect ratio and consequent disorder induced in the Zn neighbors' distribution. However, endorsement of our model requires testing and discussion of possible alternative models which could account for the experimental results. In this work, we review, test, and rule out several alternative models; the results confirm our view of the atomistic mechanisms at play, which influence the overall microstructure and resulting properties of the final thin film.},
doi = {10.1007/s11664-017-5448-2},
url = {https://www.osti.gov/biblio/1366713}, journal = {Journal of Electronic Materials},
issn = {0361-5235},
number = 6,
volume = 46,
place = {United States},
year = {2017},
month = {3}
}

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