skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Thermal conductivity of GaAs/Ge nanostructures

Authors:
 [1]; ORCiD logo [2];  [2]; ORCiD logo [1]
  1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  2. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1366562
Grant/Contract Number:  
SC0001299/DE-FG02-09ER46577
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 22; Related Information: CHORUS Timestamp: 2018-02-14 13:26:27; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Jia, Roger, Zeng, Lingping, Chen, Gang, and Fitzgerald, Eugene A. Thermal conductivity of GaAs/Ge nanostructures. United States: N. p., 2017. Web. doi:10.1063/1.4984957.
Jia, Roger, Zeng, Lingping, Chen, Gang, & Fitzgerald, Eugene A. Thermal conductivity of GaAs/Ge nanostructures. United States. doi:10.1063/1.4984957.
Jia, Roger, Zeng, Lingping, Chen, Gang, and Fitzgerald, Eugene A. Mon . "Thermal conductivity of GaAs/Ge nanostructures". United States. doi:10.1063/1.4984957.
@article{osti_1366562,
title = {Thermal conductivity of GaAs/Ge nanostructures},
author = {Jia, Roger and Zeng, Lingping and Chen, Gang and Fitzgerald, Eugene A.},
abstractNote = {},
doi = {10.1063/1.4984957},
journal = {Applied Physics Letters},
number = 22,
volume = 110,
place = {United States},
year = {Mon May 29 00:00:00 EDT 2017},
month = {Mon May 29 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4984957

Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

Save / Share: