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Title: Models for Total-Dose Radiation Effects in Non-Volatile Memory

Abstract

The objective of this work is to develop models to predict radiation effects in non- volatile memory: flash memory and ferroelectric RAM. In flash memory experiments have found that the internal high-voltage generators (charge pumps) are the most sensitive to radiation damage. Models are presented for radiation effects in charge pumps that demonstrate the experimental results. Floating gate models are developed for the memory cell in two types of flash memory devices by Intel and Samsung. These models utilize Fowler-Nordheim tunneling and hot electron injection to charge and erase the floating gate. Erase times are calculated from the models and compared with experimental results for different radiation doses. FRAM is less sensitive to radiation than flash memory, but measurements show that above 100 Krad FRAM suffers from a large increase in leakage current. A model for this effect is developed which compares closely with the measurements.

Authors:
 [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Defense Science (NA-113)
OSTI Identifier:
1365509
Report Number(s):
SAND2017-4038
652557
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
97 MATHEMATICS AND COMPUTING

Citation Formats

Campbell, Philip Montgomery, and Wix, Steven D. Models for Total-Dose Radiation Effects in Non-Volatile Memory. United States: N. p., 2017. Web. doi:10.2172/1365509.
Campbell, Philip Montgomery, & Wix, Steven D. Models for Total-Dose Radiation Effects in Non-Volatile Memory. United States. doi:10.2172/1365509.
Campbell, Philip Montgomery, and Wix, Steven D. Sat . "Models for Total-Dose Radiation Effects in Non-Volatile Memory". United States. doi:10.2172/1365509. https://www.osti.gov/servlets/purl/1365509.
@article{osti_1365509,
title = {Models for Total-Dose Radiation Effects in Non-Volatile Memory},
author = {Campbell, Philip Montgomery and Wix, Steven D.},
abstractNote = {The objective of this work is to develop models to predict radiation effects in non- volatile memory: flash memory and ferroelectric RAM. In flash memory experiments have found that the internal high-voltage generators (charge pumps) are the most sensitive to radiation damage. Models are presented for radiation effects in charge pumps that demonstrate the experimental results. Floating gate models are developed for the memory cell in two types of flash memory devices by Intel and Samsung. These models utilize Fowler-Nordheim tunneling and hot electron injection to charge and erase the floating gate. Erase times are calculated from the models and compared with experimental results for different radiation doses. FRAM is less sensitive to radiation than flash memory, but measurements show that above 100 Krad FRAM suffers from a large increase in leakage current. A model for this effect is developed which compares closely with the measurements.},
doi = {10.2172/1365509},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {4}
}

Technical Report:

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