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Title: The theory and application of bipolar transistors as displacement damage sensors.

Abstract

Abstract not provided.

Authors:
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1365464
Report Number(s):
SAND2017-3146T
652003
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Thesis/Dissertation
Country of Publication:
United States
Language:
English

Citation Formats

Tonigan, Andrew M. The theory and application of bipolar transistors as displacement damage sensors.. United States: N. p., 2017. Web.
Tonigan, Andrew M. The theory and application of bipolar transistors as displacement damage sensors.. United States.
Tonigan, Andrew M. Wed . "The theory and application of bipolar transistors as displacement damage sensors.". United States. doi:.
@article{osti_1365464,
title = {The theory and application of bipolar transistors as displacement damage sensors.},
author = {Tonigan, Andrew M},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Mar 01 00:00:00 EST 2017},
month = {Wed Mar 01 00:00:00 EST 2017}
}

Thesis/Dissertation:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this thesis or dissertation.

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