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Title: Sequential infiltration synthesis for enhancing multiple-patterning lithography

Abstract

Simplified methods of multiple-patterning photolithography using sequential infiltration synthesis to modify the photoresist such that it withstands plasma etching better than unmodified resist and replaces one or more hard masks and/or a freezing step in MPL processes including litho-etch-litho-etch photolithography or litho-freeze-litho-etch photolithography.

Inventors:
; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1364432
Patent Number(s):
9,684,234
Application Number:
13/902,169
Assignee:
UCHICAGO ARGONNE, LLC ANL
DOE Contract Number:
ACO2-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 May 24
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Darling, Seth B., Elam, Jeffrey W., and Tseng, Yu-Chih. Sequential infiltration synthesis for enhancing multiple-patterning lithography. United States: N. p., 2017. Web.
Darling, Seth B., Elam, Jeffrey W., & Tseng, Yu-Chih. Sequential infiltration synthesis for enhancing multiple-patterning lithography. United States.
Darling, Seth B., Elam, Jeffrey W., and Tseng, Yu-Chih. Tue . "Sequential infiltration synthesis for enhancing multiple-patterning lithography". United States. doi:. https://www.osti.gov/servlets/purl/1364432.
@article{osti_1364432,
title = {Sequential infiltration synthesis for enhancing multiple-patterning lithography},
author = {Darling, Seth B. and Elam, Jeffrey W. and Tseng, Yu-Chih},
abstractNote = {Simplified methods of multiple-patterning photolithography using sequential infiltration synthesis to modify the photoresist such that it withstands plasma etching better than unmodified resist and replaces one or more hard masks and/or a freezing step in MPL processes including litho-etch-litho-etch photolithography or litho-freeze-litho-etch photolithography.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 20 00:00:00 EDT 2017},
month = {Tue Jun 20 00:00:00 EDT 2017}
}

Patent:

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  • A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned usingmore » photolithography, electron-beam lithography or a block copolymer self-assembly process.« less
  • A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned usingmore » photolithography, electron-beam lithography or a block copolymer self-assembly process.« less