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Title: Selective nanoscale growth of lattice mismatched materials

Abstract

Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.

Inventors:
;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1364428
Patent Number(s):
9,685,324
Application Number:
14/610,254
Assignee:
STC.UNM SNL-A
DOE Contract Number:
909872
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Jan 30
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lee, Seung-Chang, and Brueck, Steven R. J.. Selective nanoscale growth of lattice mismatched materials. United States: N. p., 2017. Web.
Lee, Seung-Chang, & Brueck, Steven R. J.. Selective nanoscale growth of lattice mismatched materials. United States.
Lee, Seung-Chang, and Brueck, Steven R. J.. Tue . "Selective nanoscale growth of lattice mismatched materials". United States. doi:. https://www.osti.gov/servlets/purl/1364428.
@article{osti_1364428,
title = {Selective nanoscale growth of lattice mismatched materials},
author = {Lee, Seung-Chang and Brueck, Steven R. J.},
abstractNote = {Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 20 00:00:00 EDT 2017},
month = {Tue Jun 20 00:00:00 EDT 2017}
}

Patent:

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  • Methods by which the growth of a nanostructure may be precisely controlled by an electrical current are described here. In one embodiment, an interior nanostructure is grown to a predetermined geometry inside another nanostructure, which serves as a reaction chamber. The growth is effected by a catalytic agent loaded with feedstock for the interior nanostructure. Another embodiment allows a preexisting marginal quality nanostructure to be zone refined into a higher-quality nanostructure by driving a catalytic agent down a controlled length of the nanostructure with an electric current. In both embodiments, the speed of nanostructure formation is adjustable, and the growthmore » may be stopped and restarted at will. The catalytic agent may be doped or undoped to produce semiconductor effects, and the bead may be removed via acid etching.« less
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