Selective nanoscale growth of lattice mismatched materials
Patent
·
OSTI ID:1364428
Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE
- Assignee:
- STC.UNM
- Patent Number(s):
- 9,685,324
- Application Number:
- 14/610,254
- OSTI ID:
- 1364428
- Country of Publication:
- United States
- Language:
- English
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Strain-relieved, dislocation-free InxGa1−xAs∕GaAs(001) heterostructure by nanoscale-patterned growth
|
journal | November 2004 |
Lithography-free Nanoscale Patterned Growth of GaAs on Si(001) with Sub-100-nm Silica Nanoparticles by Molecular Beam Epitaxy
|
journal | September 2011 |
New approach to the high quality epitaxial growth of lattice‐mismatched materials
|
journal | July 1986 |
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