Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS 2 )

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doi:10.1002/adma.201501795

Title: Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS ₂ )

Journal Article · Fri Jul 03 00:00:00 EDT 2015 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201501795· OSTI ID:1362215

A direct synthesis of monolayer and multilayer ReS₂ by chemical vapor deposition at a low temperature of 450 °C is reported. We performed a detailed characterization of this material using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC05-00OR22725

OSTI ID:: 1362215

Journal Information:: Advanced Materials, Vol. 27, Issue 31; ISSN 0935-9648

Publisher:: Wiley

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
2D materials
chemical vapor deposition
renium disulfide
transition metal dichalcogenides
HYDROGEN EVOLUTION REACTION
HEXAGONAL BORON-NITRIDE
HIGH-QUALITY MONOLAYER
MOS2 ATOMIC LAYERS
HIGH-PERFORMANCE
GRAIN-BOUNDARY
NANOSHEETS
TRANSISTORS
GROWTH

Title: Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS 2 )

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Title: Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS ₂ )