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Title: Review Article: Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors

Journal Article · · Journal of Vacuum Science and Technology B
DOI:https://doi.org/10.1116/1.4979347· OSTI ID:1361937
 [1];  [1];  [2];  [3];  [1]
  1. Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716
  2. Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716
  3. Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716 and Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716
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The incorporation of lanthanide pnictide nanoparticles and films into III-V matrices allows for semiconductor composites with a wide range of potential optical, electrical, and thermal properties, making them useful for applications in thermoelectrics, tunnel junctions, phototconductive switches, and as contact layers. The similarities in crystal structures and lattice constants allow them to be epitaxially incorporated into III-V semiconductors with low defect densities and high overall film quality. A variety of growth techniques for these composites with be discussed, along with their growth mechanisms and current applications, with a focus on more recent developments. Results obtained from molecular beam epitaxy film growth will be highlighted, although other growth techniques will be mentioned. Optical and electronic characterization along with the microscopy analysis of these composites is presented to demonstrate influence of nanoinclusion composition and morphology on the resulting properties of the composite material.

Research Organization:
Univ. of Delaware, Newark, DE (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0008166; SC0008466; NNX15AI19H
OSTI ID:
1361937
Alternate ID(s):
OSTI ID: 1420592; OSTI ID: 1426156
Journal Information:
Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B Vol. 35 Journal Issue: 3; ISSN 2166-2746
Publisher:
American Vacuum Society/AIPCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 20 works
Citation information provided by
Web of Science

Cited By (5)

High Thermoelectric Power Factor and ZT in TbAs:InGaAs Epitaxial Nanocomposite Material journal February 2019
Growth and Thermal Characterization of TbAs Nanoparticles Grown by Inert Gas Condensation journal October 2019
Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials journal June 2018
Size dependent arsenic volatilization in ErAs nanoparticle powders journal October 2018
Simulating nanoisland layers in THz detectors using a Monte Carlo method journal January 2019

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Related Subjects

36 MATERIALS SCIENCE