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Title: Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO 3/NdGaO 3 heterostructures

Abstract

The effect of gate voltage polarity on the behavior of NdNiO 3 epitaxial thin films during ionic liquid gating is studied using in situ synchrotron X-ray techniques. We show that while negative biases have no discernible effect on the structure or composition of the films, large positive gate voltages result in the injection of a large concentration of oxygen vacancies (similar to 3%) and pronounced lattice expansion (0.17%) in addition to a 1000-fold increase in sheet resistance at room temperature. Despite the creation of large defect densities, the heterostructures exhibit a largely reversible switching behavior when sufficient time is provided for the vacancies to migrate in and out of the thin film surface. The results confirm that electrostatic gating takes place at negative gate voltages for p-type complex oxides while positive voltages favor the electrochemical reduction of Ni 3+. Switching between positive and negative gate voltages therefore involves a combination of electronic and ionic doping processes that may be utilized in future electrochemical transistors.

Authors:
 [1];  [2];  [3];  [4];  [5];  [2];  [3]
  1. University of Science and Technology of China (China). National Synchrotron Radiation Laboratory; Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  2. University of Science and Technology of China (China). High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), and Hefei National Laboratory for Physical Sciences at Microscale
  3. University of Science and Technology of China (China). National Synchrotron Radiation Laboratory
  4. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
  5. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Key Basic Research Program of China; National Natural Science Foundation of China (NNSFC); China Scholarship Council
OSTI Identifier:
1361896
Alternate Identifier(s):
OSTI ID: 1372506; OSTI ID: 1374714
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article: Published Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 5; Journal Issue: 5; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Dong, Yongqi, Xu, Haoran, Luo, Zhenlin, Zhou, Hua, Fong, Dillon D., Wu, Wenbin, and Gao, Chen. Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures. United States: N. p., 2017. Web. doi:10.1063/1.4983617.
Dong, Yongqi, Xu, Haoran, Luo, Zhenlin, Zhou, Hua, Fong, Dillon D., Wu, Wenbin, & Gao, Chen. Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures. United States. doi:10.1063/1.4983617.
Dong, Yongqi, Xu, Haoran, Luo, Zhenlin, Zhou, Hua, Fong, Dillon D., Wu, Wenbin, and Gao, Chen. Tue . "Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures". United States. doi:10.1063/1.4983617.
@article{osti_1361896,
title = {Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures},
author = {Dong, Yongqi and Xu, Haoran and Luo, Zhenlin and Zhou, Hua and Fong, Dillon D. and Wu, Wenbin and Gao, Chen},
abstractNote = {The effect of gate voltage polarity on the behavior of NdNiO3 epitaxial thin films during ionic liquid gating is studied using in situ synchrotron X-ray techniques. We show that while negative biases have no discernible effect on the structure or composition of the films, large positive gate voltages result in the injection of a large concentration of oxygen vacancies (similar to 3%) and pronounced lattice expansion (0.17%) in addition to a 1000-fold increase in sheet resistance at room temperature. Despite the creation of large defect densities, the heterostructures exhibit a largely reversible switching behavior when sufficient time is provided for the vacancies to migrate in and out of the thin film surface. The results confirm that electrostatic gating takes place at negative gate voltages for p-type complex oxides while positive voltages favor the electrochemical reduction of Ni3+. Switching between positive and negative gate voltages therefore involves a combination of electronic and ionic doping processes that may be utilized in future electrochemical transistors.},
doi = {10.1063/1.4983617},
journal = {APL Materials},
number = 5,
volume = 5,
place = {United States},
year = {Tue May 16 00:00:00 EDT 2017},
month = {Tue May 16 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4983617

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