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Title: Probing carbon impurities in hexagonal boron nitride epilayers

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]
  1. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1361858
Grant/Contract Number:
NA0002927
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 18; Related Information: CHORUS Timestamp: 2018-02-14 19:59:52; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Uddin, M. R., Li, J., Lin, J. Y., and Jiang, H. X. Probing carbon impurities in hexagonal boron nitride epilayers. United States: N. p., 2017. Web. doi:10.1063/1.4982647.
Uddin, M. R., Li, J., Lin, J. Y., & Jiang, H. X. Probing carbon impurities in hexagonal boron nitride epilayers. United States. doi:10.1063/1.4982647.
Uddin, M. R., Li, J., Lin, J. Y., and Jiang, H. X. Mon . "Probing carbon impurities in hexagonal boron nitride epilayers". United States. doi:10.1063/1.4982647.
@article{osti_1361858,
title = {Probing carbon impurities in hexagonal boron nitride epilayers},
author = {Uddin, M. R. and Li, J. and Lin, J. Y. and Jiang, H. X.},
abstractNote = {},
doi = {10.1063/1.4982647},
journal = {Applied Physics Letters},
number = 18,
volume = 110,
place = {United States},
year = {Mon May 01 00:00:00 EDT 2017},
month = {Mon May 01 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4982647

Citation Metrics:
Cited by: 2works
Citation information provided by
Web of Science

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  • Hexagonal boron nitride (hBN) has emerged as a fundamentally and technologically important material system owing to its unique physical properties including layered structure, wide energy bandgap, large optical absorption, and neutron capture cross section. As for any materials under development, it is necessary to establish device processing techniques to realize active devices based on hBN. The authors report on the advancements in dry etching techniques for active devices based on hBN epilayers via inductively coupled plasma (ICP). The effect of ICP radio frequency (RF) power on the etch rate and vertical side wall profile was studied. The etching depth andmore » angle with respect to the surface were measured using atomic force microscopy showing that an etching rate ∼1.25 μm/min and etching angles >80° were obtained. Profilometer data and scanning electron microscope images confirmed these results. This work demonstrates that SF{sub 6} is very suitable for etching hBN epilayers in RF plasma environments and can serve as a guide for future hBN device processing.« less
  • The suitability of Si as an n-type dopant in hexagonal boron nitride (hBN) wide bandgap semiconductor has been investigated. Si doped hBN epilayers were grown via in-situ Si doping by metal organic chemical vapor deposition technique. Hall effect measurements revealed that Si doped hBN epilayers exhibit n-type conduction at high temperatures (T > 800 K) with an in-plane resistivity of ∼12 Ω·cm, electron mobility of μ ∼ 48 cm{sup 2}/V·s and concentration of n ∼ 1 × 10{sup 16} cm{sup −3}. Temperature dependent resistivity results yielded a Si energy level in hBN of about 1.2 eV, which is consistent withmore » a previously calculated value for Si substitutionally incorporated into the B sites in hBN. The results therefore indicate that Si is not a suitable dopant for hBN for room temperature device applications.« less
  • The suitability of Si as an n-type dopant in hexagonal boron nitride (hBN) wide bandgap semiconductor has been investigated. Si doped hBN epilayers were grown via in-situ Si doping by metal organic chemical vapor deposition technique. Hall effect measurements revealed that Si doped hBN epilayers exhibit n-type conduction at high temperatures (T > 800 K) with an in-plane resistivity of ∼12 Ω·cm, electron mobility of μ ∼ 48 cm{sup 2}/V·s and concentration of n ∼ 1 × 10{sup 16} cm{sup −3}. Temperature dependent resistivity results yielded a Si energy level in hBN of about 1.2 eV, which is consistent withmore » a previously calculated value for Si substitutionally incorporated into the B sites in hBN. The results therefore indicate that Si is not a suitable dopant for hBN for room temperature device applications.« less
  • Photoluminescence spectroscopy has been employed to probe the near band-edge transitions in hexagonal BN (h-BN) epilayers synthesized under varying ammonia flow rates. The results suggest that the quasi-donor-acceptor pair emission line at 5.3 eV is due to the transition between the nitrogen vacancy and a deep acceptor, whereas the 5.5 eV emission line is due to the recombination of an exciton bound to a deep acceptor formed by carbon impurity occupying the nitrogen site. By growing h-BN under high ammonia flow rates, nitrogen vacancy related peaks can be eliminated and epilayers exhibiting pure free exciton emission have been obtained.