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Title: Modulation calorimetry in diamond anvil cells. I. Heat flow models

Authors:
 [1];  [2];  [3]
  1. Geophysical Laboratory, Carnegie Institution for Science, Washington, District of Columbia 20015, USA
  2. Lawrence Livermore National Lab, Livermore, California 94550, USA
  3. Department of Earth and Planetary Science, University of California, Berkeley, California 94720, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1361808
Grant/Contract Number:
CDAC
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 121; Journal Issue: 14; Related Information: CHORUS Timestamp: 2018-02-14 11:45:34; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Geballe, Zachary M., Collins, Gilbert W., and Jeanloz, Raymond. Modulation calorimetry in diamond anvil cells. I. Heat flow models. United States: N. p., 2017. Web. doi:10.1063/1.4979849.
Geballe, Zachary M., Collins, Gilbert W., & Jeanloz, Raymond. Modulation calorimetry in diamond anvil cells. I. Heat flow models. United States. doi:10.1063/1.4979849.
Geballe, Zachary M., Collins, Gilbert W., and Jeanloz, Raymond. Fri . "Modulation calorimetry in diamond anvil cells. I. Heat flow models". United States. doi:10.1063/1.4979849.
@article{osti_1361808,
title = {Modulation calorimetry in diamond anvil cells. I. Heat flow models},
author = {Geballe, Zachary M. and Collins, Gilbert W. and Jeanloz, Raymond},
abstractNote = {},
doi = {10.1063/1.4979849},
journal = {Journal of Applied Physics},
number = 14,
volume = 121,
place = {United States},
year = {Fri Apr 14 00:00:00 EDT 2017},
month = {Fri Apr 14 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4979849

Citation Metrics:
Cited by: 1work
Citation information provided by
Web of Science

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  • Cited by 1
  • By using a thin {sup 13}C diamond chip together with a {sup 12}C diamond chip as sensors, the diamond Raman spectra provide the means to measure pressure precisely ({plus_minus}0.3 GPa) at any temperature (10{endash}1200 K) and simultaneous hydrostatic (or quasihydrostatic) pressure (0{endash}25 GPa) for {ital any} sample compatible with an externally heated diamond-anvil cell. Minimum interference between the Raman spectrum from the diamond anvils and those of the pressure sensors is obtained by measuring pressures with the Raman signal from the {sup 13}C diamond chip up to 13 GPa, and that from the {sup 12}C chip above 10 GPa. Themore » best orientation of the diamond anvils is with the [100] direction along the direction of applied force, in order to further minimize the interference. At 298 K, the pressure dependence of the {sup 13}C diamond first-order Raman line is given by {nu}(P)={nu}{sub RT}+aP for 91 at.{percent} {sup 13}C diamond, where {nu}{sub RT}({sup 13}C)=1287.79{plus_minus}0.28cm{sup {minus}1} and a({sup 13}C)=2.83{plus_minus}0.05cm{sup {minus}1}/GPa. Analysis of values from the literature shows that the pressure dependence of the Raman line of {sup 12}C diamond is best described by the parameters {nu}{sub RT}({sup 12}C)=1332.5cm{sup {minus}1} and a({sup 12}C)=2.90{plus_minus}0.05cm{sup {minus}1}/GPa. The temperature dependence of the diamond Raman line is best described by {nu}(T){minus}{nu}{sub RT}=b{sub 0} for T{le}200K, and {nu}(T){minus}{nu}{sub RT}=b{sub 0}+b{sub 1.5}T{sub k}{sup 1.5} for 200K{le}T{le}1500K, where T{sub k}=T{minus}200K. For 91 at.{percent} {sup 13}C diamond, the parameters are b{sub 0}=0.450{plus_minus}0.025cm{sup {minus}1}; b{sub 1.5}={minus}(7.36{plus_minus}0.09){times}10{sup {minus}4}cm{sup {minus}1}K{sup {minus}1.5}; and for {sup 12}C diamond, the parameters are b{sub 0}=0.467{plus_minus}0.033cm{sup {minus}1}, b{sub 1.5}={minus}(7.56{plus_minus}0.10){times}10{sup {minus}4}cm{sup {minus}1}K{sup {minus}1.5}. (Abstract Truncated)« less
  • Hydrothermal diamond anvil cells (HDACs) provide facile means for coupling synchrotron X-ray techniques with pressure up to 10 GPa and temperature up to 1300 K. This manuscript reports on an application of the HDAC as an ambient-pressure sample environment for performingin situdefect annealing and thermal expansion studies of swift heavy ion irradiated CeO 2and ThO 2using synchrotron X-ray diffraction. The advantages of thein situHDAC technique over conventional annealing methods include rapid temperature ramping and quench times, high-resolution measurement capability, simultaneous annealing of multiple samples, and prolonged temperature and apparatus stability at high temperatures. Isochronal annealing between 300 and 1100 Kmore » revealed two-stage and one-stage defect recovery processes for irradiated CeO 2and ThO 2, respectively, indicating that the morphology of the defects produced by swift heavy ion irradiation of these two materials differs significantly. These results suggest that electronic configuration plays a major role in both the radiation-induced defect production and high-temperature defect recovery mechanisms of CeO 2and ThO 2.« less