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Title: High temperature efficient, stable Si wafer-based selective solar absorbers

Authors:
ORCiD logo [1];  [1];  [1];  [2]; ORCiD logo [1];  [1]; ORCiD logo [1]
  1. Birck Nanotechnology Center, Electrical and Computer Engineering, 1205 W. State St, Purdue University, West Lafayette, Indiana 47907, USA
  2. ETH (Swiss Federal Institute of Technology) Zurich, Technopark, ETH-Building, Technoparkstr. 1, CH-8005 Zurich, Switzerland
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1361803
Grant/Contract Number:  
EE0004946
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 14; Related Information: CHORUS Timestamp: 2018-02-14 20:18:37; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Tian, Hao, Zhou, Zhiguang, Liu, Tianran, Karina, Cindy, Guler, Urcan, Shalaev, Vladimir, and Bermel, Peter. High temperature efficient, stable Si wafer-based selective solar absorbers. United States: N. p., 2017. Web. doi:10.1063/1.4979510.
Tian, Hao, Zhou, Zhiguang, Liu, Tianran, Karina, Cindy, Guler, Urcan, Shalaev, Vladimir, & Bermel, Peter. High temperature efficient, stable Si wafer-based selective solar absorbers. United States. doi:10.1063/1.4979510.
Tian, Hao, Zhou, Zhiguang, Liu, Tianran, Karina, Cindy, Guler, Urcan, Shalaev, Vladimir, and Bermel, Peter. Mon . "High temperature efficient, stable Si wafer-based selective solar absorbers". United States. doi:10.1063/1.4979510.
@article{osti_1361803,
title = {High temperature efficient, stable Si wafer-based selective solar absorbers},
author = {Tian, Hao and Zhou, Zhiguang and Liu, Tianran and Karina, Cindy and Guler, Urcan and Shalaev, Vladimir and Bermel, Peter},
abstractNote = {},
doi = {10.1063/1.4979510},
journal = {Applied Physics Letters},
number = 14,
volume = 110,
place = {United States},
year = {Mon Apr 03 00:00:00 EDT 2017},
month = {Mon Apr 03 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4979510

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