skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Conduction in In 2O 3/YSZ heterostructures: Complex interplay between electrons and ions, mediated by interfaces

Abstract

Thin film In 2O 3/YSZ heterostructures exhibit significant increases in electrical conductance with time when small in-plane electric fields are applied. Contact resistances between the current electrodes and film, and between current electrodes and substrate are responsible for the behavior. With an in-plane electric field, different field profiles are established in the two materials, with the result that oxygen ions can be driven across the heterointerface, altering the doping of the n-type In 2O 3. Furthermore, a low frequency inductive feature observed in AC impedance spectroscopy measurements under DC bias conditions was found to be due to frequency-dependent changes in the contact resistance.

Authors:
 [1];  [1]
  1. Argonne National Lab. (ANL), Argonne, IL (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); Materials Sciences and Engineering Division
OSTI Identifier:
1361785
Alternate Identifier(s):
OSTI ID: 1352920; OSTI ID: 1420716
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article: Published Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 5; Journal Issue: 4; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Veal, B. W., and Eastman, J. A. Conduction in In2O3/YSZ heterostructures: Complex interplay between electrons and ions, mediated by interfaces. United States: N. p., 2017. Web. doi:10.1063/1.4977205.
Veal, B. W., & Eastman, J. A. Conduction in In2O3/YSZ heterostructures: Complex interplay between electrons and ions, mediated by interfaces. United States. doi:10.1063/1.4977205.
Veal, B. W., and Eastman, J. A. Wed . "Conduction in In2O3/YSZ heterostructures: Complex interplay between electrons and ions, mediated by interfaces". United States. doi:10.1063/1.4977205.
@article{osti_1361785,
title = {Conduction in In2O3/YSZ heterostructures: Complex interplay between electrons and ions, mediated by interfaces},
author = {Veal, B. W. and Eastman, J. A.},
abstractNote = {Thin film In2O3/YSZ heterostructures exhibit significant increases in electrical conductance with time when small in-plane electric fields are applied. Contact resistances between the current electrodes and film, and between current electrodes and substrate are responsible for the behavior. With an in-plane electric field, different field profiles are established in the two materials, with the result that oxygen ions can be driven across the heterointerface, altering the doping of the n-type In2O3. Furthermore, a low frequency inductive feature observed in AC impedance spectroscopy measurements under DC bias conditions was found to be due to frequency-dependent changes in the contact resistance.},
doi = {10.1063/1.4977205},
journal = {APL Materials},
number = 4,
volume = 5,
place = {United States},
year = {Wed Mar 01 00:00:00 EST 2017},
month = {Wed Mar 01 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4977205

Save / Share: