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Title: High-efficiency selective boron emitter formed by wet chemical etch-back for n -type screen-printed Si solar cells

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1];  [2]
  1. Georgia Institute of Technology, 777 Atlantic Drive, Atlanta, Georgia 30332-0250, USA
  2. Georgia Institute of Technology, 777 Atlantic Drive, Atlanta, Georgia 30332-0250, USA, Suniva Inc., 5765 Peachtree Industrial Blvd., Norcross, Georgia 30092, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1361726
Grant/Contract Number:
FPACE II contract DE-EE0006336; Solarmat 2 contract DE-EE0006815
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 2; Related Information: CHORUS Timestamp: 2018-02-14 09:19:53; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Tao, Yuguo, Madani, Keeya, Cho, Eunhwan, Rounsaville, Brian, Upadhyaya, Vijaykumar, and Rohatgi, Ajeet. High-efficiency selective boron emitter formed by wet chemical etch-back for n -type screen-printed Si solar cells. United States: N. p., 2017. Web. doi:10.1063/1.4973626.
Tao, Yuguo, Madani, Keeya, Cho, Eunhwan, Rounsaville, Brian, Upadhyaya, Vijaykumar, & Rohatgi, Ajeet. High-efficiency selective boron emitter formed by wet chemical etch-back for n -type screen-printed Si solar cells. United States. doi:10.1063/1.4973626.
Tao, Yuguo, Madani, Keeya, Cho, Eunhwan, Rounsaville, Brian, Upadhyaya, Vijaykumar, and Rohatgi, Ajeet. Mon . "High-efficiency selective boron emitter formed by wet chemical etch-back for n -type screen-printed Si solar cells". United States. doi:10.1063/1.4973626.
@article{osti_1361726,
title = {High-efficiency selective boron emitter formed by wet chemical etch-back for n -type screen-printed Si solar cells},
author = {Tao, Yuguo and Madani, Keeya and Cho, Eunhwan and Rounsaville, Brian and Upadhyaya, Vijaykumar and Rohatgi, Ajeet},
abstractNote = {},
doi = {10.1063/1.4973626},
journal = {Applied Physics Letters},
number = 2,
volume = 110,
place = {United States},
year = {Mon Jan 09 00:00:00 EST 2017},
month = {Mon Jan 09 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4973626

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  • This paper reports on the implementation of carrier-selective tunnel oxide passivated rear contact for high-efficiency screen-printed large area n-type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n+ polysilicon layer provides excellent rear contact passivation with implied open-circuit voltage iVoc of 714mV and saturation current density J0b of 10.3 fA/cm2 for the back surface field region. The durability of this passivation scheme is also investigated for a back-end high temperature process. In combination with an ion-implanted Al2O3-passivated boron emitter and screen-printed front metal grids,more » this passivated rear contact enabled 21.2% efficient front junction Si solar cells on 239 cm2 commercial grade n-type Czochralski wafers.« less
  • No abstract prepared.
  • The highest energy conversion efficiencies in the field of silicon-based photovoltaics have been achieved with back-junction back-contact (BJBC) silicon solar cells by several companies and research groups. One of the most complex parts of this cell structure is the fabrication of the locally doped p- and n-type regions, both on the back side of the solar cell. In this work, we introduce a process sequence based on a synergistic use of ion implantation and furnace diffusion. This sequence enables the formation of all doped regions for a BJBC silicon solar cell in only three processing steps. We observed that implantedmore » phosphorus can block the diffusion of boron atoms into the silicon substrate by nearly three orders of magnitude. Thus, locally implanted phosphorus can be used as an in-situ mask for a subsequent boron diffusion which simultaneously anneals the implanted phosphorus and forms the boron emitter. BJBC silicon solar cells produced with such an easy-to-fabricate process achieved conversion efficiencies of up to 21.7%. An open-circuit voltage of 674 mV and a fill factor of 80.6% prove that there is no significant recombination at the sharp transition between the highly doped emitter and the highly doped back surface field at the device level.« less
  • A novel structure, high conversion efficiency amorphous silicon (a-Si)/metal substrate-type solar cell has been developed. The new structure, deduced from the conventional pin junction by the use of a gradual compositional grading p-type a-SiC:H layer between an ultrathin (approx.20 A) wide optical band gap (approx.2.4 eV) p-type a-SiC:H layer and the i layer, exhibits markedly enhanced open-circuit voltage (V/sub oc/) and short-circuit current density (I/sub sc/) over the conventional a-Si pin/substrate-type solar cell. Especially, the collection efficiency in the newly developed structure was found to be remarkably increased at short wavelengths. The experimentally observed improvement in the blue response ismore » due to the reduction in effective interface recombination combined with the enhanced window effect. An energy conversion efficiency of 8.40% under air mass (AM) 1 (100 mW/cm/sup 2/) illumination has been obtained in the first trial of a cell fabricated by the rf glow discharge decomposition of pure silane (SiH/sub 4/).« less