Atomic Scale Dynamics of Contact Formation in the Cross-Section of InGaAs Nanowire Channels

Chen, Renjie; Jungjohann, Katherine L.; Mook, William M.; Nogan, John; Dayeh, Shadi A.

doi:10.1021/acs.nanolett.6b04713

Title: Atomic Scale Dynamics of Contact Formation in the Cross-Section of InGaAs Nanowire Channels

Journal Article · Thu Mar 23 00:00:00 EDT 2017 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.6b04713· OSTI ID:1357020

^[1]; Jungjohann, Katherine L. ^[2]; Mook, William M. ^[2]; Nogan, John ^[2];

^[3]

Univ. of California, San Diego, CA (United States). Dept. of Electrical and Computer Engineering
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
Univ. of California, San Diego, CA (United States). Dept. of Electrical and Computer Engineering and Materials Science and Engineering Program and Dept. of NanoEngineering

In the alloyed and compound contacts between metal and semiconductor transistor channels we see that they enable self-aligned gate processes which play a significant role in transistor scaling. At nanoscale dimensions and for nanowire channels, prior experiments focused on reactions along the channel length, but the early stage of reaction in their cross sections remains unknown. We report on the dynamics of the solid-state reaction between metal (Ni) and semiconductor (In_0.53Ga_0.47As), along the cross-section of nanowires that are 15 nm in width. Unlike planar structures where crystalline nickelide readily forms at conventional, low alloying temperatures, nanowires exhibit a solid-state amorphization step that can undergo a crystal regrowth step at elevated temperatures. Here, we capture the layer-by-layer reaction mechanism and growth rate anisotropy using in situ transmission electron microscopy (TEM). Our kinetic model depicts this new, in-plane contact formation which could pave the way for engineered nanoscale transistors.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: AC04-94AL85000; AC52-06NA25396

OSTI ID:: 1357020

Alternate ID(s):: OSTI ID: 1361650

Report Number(s):: SAND2017-2000J; SAND-2016-9942J; 651278

Journal Information:: Nano Letters, Vol. 17, Issue 4; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 12 works

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References (29)

Nanometre-scale electronics with III–V compound semiconductors del Alamo, Jesús A. Nature, Vol. 479, Issue 7373 https://doi.org/10.1038/nature10677	journal	November 2011
Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks Cui, Yi; Lieber, Charles M. Science, Vol. 291, Issue 5505, p. 851-853 https://doi.org/10.1126/science.291.5505.851	journal	February 2001
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices Duan, Xiangfeng; Huang, Yu; Cui, Yi Nature, Vol. 409, Issue 6816, p. 66-69 https://doi.org/10.1038/35051047	journal	January 2001
Directed Assembly of One-Dimensional Nanostructures into Functional Networks Huang, Yu; Duan, Xiangfeng; Wei, Qingqiao Science, Vol. 291, Issue 5504, p. 630-633 https://doi.org/10.1126/science.291.5504.630	journal	January 2001
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm IEEE Transactions on Electron Devices, Vol. 47, Issue 12 https://doi.org/10.1109/16.887014	journal	January 2000
Silicon Device Scaling to the Sub-10-nm Regime Ieong, Meikei; Doris, Bruce; Kedzierski, Jakub Science, Vol. 306, Issue 5704, p. 2057-2060 https://doi.org/10.1126/science.1100731	journal	December 2004
Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors Ferain, Isabelle; Colinge, Cynthia A.; Colinge, Jean-Pierre Nature, Vol. 479, Issue 7373 https://doi.org/10.1038/nature10676	journal	November 2011
Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures Wu, Yue; Xiang, Jie; Yang, Chen Nature, Vol. 430, Issue 6995, p. 61-65 https://doi.org/10.1038/nature02674	journal	July 2004
Electrical contacts to one- and two-dimensional nanomaterials Léonard, François; Talin, A. Alec Nature Nanotechnology, Vol. 6, Issue 12 https://doi.org/10.1038/nnano.2011.196	journal	November 2011
Solid-state reaction of nickel silicide and germanide contacts to semiconductor nanochannels Tang, Wei; Nguyen, Binh-Minh; Chen, Renjie Semiconductor Science and Technology, Vol. 29, Issue 5 https://doi.org/10.1088/0268-1242/29/5/054004	journal	April 2014
Dual-gate silicon nanowire transistors with nickel silicide contacts Appenzeller, J.; Knoch, J.; Tutuc, E. 2006 International Electron Devices Meeting https://doi.org/10.1109/IEDM.2006.346842	conference	December 2006
Kinetic Manipulation of Silicide Phase Formation in Si Nanowire Templates Chen, Yu; Lin, Yung-Chen; Zhong, Xing Nano Letters, Vol. 13, Issue 8 https://doi.org/10.1021/nl401593f	journal	July 2013
Kinetic Competition Model and Size-Dependent Phase Selection in 1-D Nanostructures Chen, Yu; Lin, Yung-Chen; Huang, Chun-Wei Nano Letters, Vol. 12, Issue 6 https://doi.org/10.1021/nl300990q	journal	May 2012
Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing Tang, Jianshi; Wang, Chiu-Yen; Xiu, Faxian Advances in Materials Science and Engineering, Vol. 2011 https://doi.org/10.1155/2011/316513	journal	January 2011
Formation and Characterization of Ni _x InAs/InAs Nanowire Heterostructures by Solid Source Reaction Chueh, Yu-Lun; Ford, Alexandra C.; Ho, Johnny C. Nano Letters, Vol. 8, Issue 12 https://doi.org/10.1021/nl802681x	journal	December 2008
Ultrashort Channel Silicon Nanowire Transistors with Nickel Silicide Source/Drain Contacts Tang, Wei; Dayeh, Shadi A.; Picraux, S. Tom Nano Letters, Vol. 12, Issue 8 https://doi.org/10.1021/nl3011676	journal	July 2012
In Situ Heat-Induced Replacement of GaAs Nanowires by Au Fauske, Vidar T.; Huh, Junghwan; Divitini, Giorgio Nano Letters, Vol. 16, Issue 5 https://doi.org/10.1021/acs.nanolett.6b00109	journal	April 2016
Nucleation and Atomic Layer Reaction in Nickel Silicide for Defect-Engineered Si Nanochannels Tang, Wei; Picraux, S. Tom; Huang, Jian Yu Nano Letters, Vol. 13, Issue 6 https://doi.org/10.1021/nl400949n	journal	May 2013
A Self-Aligned Ni-InGaAs Contact Technology for InGaAs Channel n-MOSFETs Zhang, Xingui; Guo, Hua Xin Journal of The Electrochemical Society, Vol. 159, Issue 5 https://doi.org/10.1149/2.060205jes	journal	January 2012
Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n ⁺ -In _0.53 Ga _0.47 As Abraham, Michael; Yu, Shih-Ying; Choi, Won Hyuck Journal of Applied Physics, Vol. 116, Issue 16 https://doi.org/10.1063/1.4900535	journal	October 2014
CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs Czornomaz, L.; El Kazzi, M.; Hopstaken, M. Solid-State Electronics, Vol. 74 https://doi.org/10.1016/j.sse.2012.04.014	journal	August 2012
Crystal structure and epitaxial relationship of Ni ₄ InGaAs ₂ films formed on InGaAs by annealing Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 31, Issue 1 https://doi.org/10.1116/1.4769266	journal	January 2013
Epitaxial NiInGaAs formed by solid state reaction on In _0.53 Ga _0.47 As: Structural and chemical study Shekhter, Pini; Mehari, Shlomo; Ritter, Dan Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 31, Issue 3 https://doi.org/10.1116/1.4802917	journal	May 2013
Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In0.53Ga0.47As under-layer by means of full 3D reciprocal space mapping Zhiou, S.; Rodriguez, Ph.; Gergaud, P. 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) https://doi.org/10.1109/IITC-MAM.2015.7325627	conference	May 2015
Amorphous phase formation in an as‐deposited platinum‐GaAs interface Ko, Dae‐Hong; Sinclair, Robert Applied Physics Letters, Vol. 58, Issue 17 https://doi.org/10.1063/1.105077	journal	April 1991
Size and Orientation Effects on the Kinetics and Structure of Nickelide Contacts to InGaAs Fin Structures Chen, Renjie; Dayeh, Shadi A. Nano Letters, Vol. 15, Issue 6 https://doi.org/10.1021/acs.nanolett.5b00327	journal	May 2015
Growth and Stress-induced Transformation of Zinc blende AlN Layers in Al-AlN-TiN Multilayers Li, Nan; Yadav, Satyesh K.; Wang, Jian Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep18554	journal	December 2015
Mn Interstitial Diffusion in $(G a, M n) A s$ Edmonds, K. W.; Bogusławski, P.; Wang, K. Y. Physical Review Letters, Vol. 92, Issue 3 https://doi.org/10.1103/PhysRevLett.92.037201	journal	January 2004
Novel Heterogeneous Integration Technology of III-V Layers and InGaAs FinFETs to Silicon Dai, Xing; Nguyen, Binh-Minh; Hwang, Yoontae Advanced Functional Materials, Vol. 24, Issue 28 https://doi.org/10.1002/adfm.201400105	journal	April 2014

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36 MATERIALS SCIENCE
amorphization
In situ TEM
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nanowire
nickelide
recrystallization

Title: Atomic Scale Dynamics of Contact Formation in the Cross-Section of InGaAs Nanowire Channels

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