skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Defect reduction in seeded aluminum nitride crystal growth

Abstract

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density .ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Inventors:
; ; ;
Publication Date:
Research Org.:
CRYSTAL IS, INC. Green Island, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1361546
Patent Number(s):
9,670,591
Application Number:
14/458,825
Assignee:
CRYSTAL IS, INC. CHO
DOE Contract Number:
70NANB4H3051
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Aug 13
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Bondokov, Robert T., Morgan, Kenneth E., Schowalter, Leo J., and Slack, Glen A.. Defect reduction in seeded aluminum nitride crystal growth. United States: N. p., 2017. Web.
Bondokov, Robert T., Morgan, Kenneth E., Schowalter, Leo J., & Slack, Glen A.. Defect reduction in seeded aluminum nitride crystal growth. United States.
Bondokov, Robert T., Morgan, Kenneth E., Schowalter, Leo J., and Slack, Glen A.. Tue . "Defect reduction in seeded aluminum nitride crystal growth". United States. doi:. https://www.osti.gov/servlets/purl/1361546.
@article{osti_1361546,
title = {Defect reduction in seeded aluminum nitride crystal growth},
author = {Bondokov, Robert T. and Morgan, Kenneth E. and Schowalter, Leo J. and Slack, Glen A.},
abstractNote = {Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density .ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 06 00:00:00 EDT 2017},
month = {Tue Jun 06 00:00:00 EDT 2017}
}

Patent:

Save / Share: