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Title: Oxygen Vacancy-Tuned Physical Properties in Perovskite Thin Films with Multiple B-site Valance States

Abstract

Controlling oxygen content in perovskite oxides with ABO 3 structure is one of most critical steps for tuning their functionality. Notably, there have been tremendous efforts to understand the effect of changes in oxygen content on the properties of perovskite thin films that are not composed of cations with multiple valance states. Here, we study the effect of oxygen vacancies on structural and electrical properties in epitaxial thin films of SrFeO 3-δ (SFO), where SFO is a compound with multiple valance states at the B site. Various annealing treatments are used to produce different oxygen contents in the films, which has resulted in significant structural changes in the fully strained SFO films. The out-of-plane lattice parameter and tetragonality increase with decreasing oxygen concentration, indicating the crystal structure is closely related to the oxygen content. Importantly, variation of the oxygen content in the films significantly affects the dielectric properties, leakage conduction mechanisms, and the resistive hysteresis of the materials. These results establish the relationship between oxygen content and structural and functional properties for a range of multivalent transition metal oxides.

Authors:
 [1];  [1];  [2];  [1];  [1];  [1];  [1];  [2];  [3]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  2. Univ. of Texas, San Antonio, TX (United States). Dept. of Physics and Astronomy
  3. Los Alamos National Lab. (LANL), Los Alamos, NM (United States); The State Univ. of New York, Buffalo, NY (United States). Dept. of Materials Design and Innovation
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC)
Contributing Org.:
Univ. of Texas, San Antonio, TX (United States); The State Univ. of New York, Buffalo, NY (United States)
OSTI Identifier:
1360705
Report Number(s):
LA-UR-16-26175
Journal ID: ISSN 2045-2322
Grant/Contract Number:
AC52-06NA25396
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 7; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Material Science; Thin Films, Dielectric, Complex Oxides

Citation Formats

Enriquez, Erik, Chen, Aiping, Harrell, Zach, Dowden, Paul, Koskelo, Nicholas, Roback, Joseph, Janoschek, Marc, Chen, Chonglin, and Jia, Quanxi. Oxygen Vacancy-Tuned Physical Properties in Perovskite Thin Films with Multiple B-site Valance States. United States: N. p., 2017. Web. doi:10.1038/srep46184.
Enriquez, Erik, Chen, Aiping, Harrell, Zach, Dowden, Paul, Koskelo, Nicholas, Roback, Joseph, Janoschek, Marc, Chen, Chonglin, & Jia, Quanxi. Oxygen Vacancy-Tuned Physical Properties in Perovskite Thin Films with Multiple B-site Valance States. United States. doi:10.1038/srep46184.
Enriquez, Erik, Chen, Aiping, Harrell, Zach, Dowden, Paul, Koskelo, Nicholas, Roback, Joseph, Janoschek, Marc, Chen, Chonglin, and Jia, Quanxi. Tue . "Oxygen Vacancy-Tuned Physical Properties in Perovskite Thin Films with Multiple B-site Valance States". United States. doi:10.1038/srep46184. https://www.osti.gov/servlets/purl/1360705.
@article{osti_1360705,
title = {Oxygen Vacancy-Tuned Physical Properties in Perovskite Thin Films with Multiple B-site Valance States},
author = {Enriquez, Erik and Chen, Aiping and Harrell, Zach and Dowden, Paul and Koskelo, Nicholas and Roback, Joseph and Janoschek, Marc and Chen, Chonglin and Jia, Quanxi},
abstractNote = {Controlling oxygen content in perovskite oxides with ABO3 structure is one of most critical steps for tuning their functionality. Notably, there have been tremendous efforts to understand the effect of changes in oxygen content on the properties of perovskite thin films that are not composed of cations with multiple valance states. Here, we study the effect of oxygen vacancies on structural and electrical properties in epitaxial thin films of SrFeO3-δ (SFO), where SFO is a compound with multiple valance states at the B site. Various annealing treatments are used to produce different oxygen contents in the films, which has resulted in significant structural changes in the fully strained SFO films. The out-of-plane lattice parameter and tetragonality increase with decreasing oxygen concentration, indicating the crystal structure is closely related to the oxygen content. Importantly, variation of the oxygen content in the films significantly affects the dielectric properties, leakage conduction mechanisms, and the resistive hysteresis of the materials. These results establish the relationship between oxygen content and structural and functional properties for a range of multivalent transition metal oxides.},
doi = {10.1038/srep46184},
journal = {Scientific Reports},
number = ,
volume = 7,
place = {United States},
year = {Tue Apr 18 00:00:00 EDT 2017},
month = {Tue Apr 18 00:00:00 EDT 2017}
}

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  • Epitaxial SrFeO 3-δ (SFO) thin films have been grown on various substrates by pulsed laser deposition. The structural and electrical properties of SFO thin films are monitored with time in different atmospheres at room temperature, showing time-dependent crystal structure and electrical conductivity. The increased out-of-plane lattice parameter and resistivity over time are associated with the increased oxygen vacancies density in SFO thin films. The epitaxial strain plays an important role in determining the initial resistivity, and the sample environment determines the trend of resistivity change over time. An amorphous Al 2O 3 passivation layer has been found to be effectivemore » in stabilizing the structure and electrical properties of SFO thin films. Lastly, this work explores time dependent structure and properties variation in oxide films and provides a way to stabilize thin film materials that are sensitive to oxygen vacancies.« less
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