skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Further Studies on the Effect of SiN x Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation

Abstract

We present the impacts of silicon nitride (SiNx) antireflection coating refractive index and emitter sheet resistance on potential-induced degradation of the shunting type (PID-s). Previously, it has been shown that the cell becomes more PID-s-susceptible as the refractive index decreases or the emitter sheet resistance increases. To verify the effect of refractive index on PID-s, we fabricated cells with varying SiN x refractive index (1.87, 1.94, 2.05) on typical p-type base solar cells with ~60 Ω/sq emitters. However, none of these cells showed output power degradation, regardless of the refractive index. Further investigation of the emitter showed that the PID-s was suppressed at ~60 Ω/sq due to the extremely high surface phosphorus concentration (6 x 10 21 cm -3), as measured by secondary ion mass spectrometry. Furthermore, PID-s was observed on cells possessing a high emitter sheet resistance (~80 Ω/sq). In conclusion, the emitter surface phosphorus concentration plays an important role in determining PID-s susceptibility.

Authors:
 [1];  [1];  [1];  [1];  [2];  [3]
  1. Arizona State Univ., Tempe, AZ (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Semilab SDI LLC, Tampa, FL (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE); National Science Foundation (NSF)
OSTI Identifier:
1360668
Report Number(s):
NREL/JA-5K00-68608
Journal ID: ISSN 2156-3381
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 7; Journal Issue: 2; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; durability; high voltage; potential-induced degradation (PID); reliability; sheet resistance; silicon nitride (SiNx)

Citation Formats

Oh, Jaewon, Dauksher, Bill, Bowden, Stuart, Tamizhmani, Govindasamy, Hacke, Peter, and D'Amico, John. Further Studies on the Effect of SiNx Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation. United States: N. p., 2017. Web. doi:10.1109/JPHOTOV.2016.2642952.
Oh, Jaewon, Dauksher, Bill, Bowden, Stuart, Tamizhmani, Govindasamy, Hacke, Peter, & D'Amico, John. Further Studies on the Effect of SiNx Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation. United States. doi:10.1109/JPHOTOV.2016.2642952.
Oh, Jaewon, Dauksher, Bill, Bowden, Stuart, Tamizhmani, Govindasamy, Hacke, Peter, and D'Amico, John. Wed . "Further Studies on the Effect of SiNx Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation". United States. doi:10.1109/JPHOTOV.2016.2642952. https://www.osti.gov/servlets/purl/1360668.
@article{osti_1360668,
title = {Further Studies on the Effect of SiNx Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation},
author = {Oh, Jaewon and Dauksher, Bill and Bowden, Stuart and Tamizhmani, Govindasamy and Hacke, Peter and D'Amico, John},
abstractNote = {We present the impacts of silicon nitride (SiNx) antireflection coating refractive index and emitter sheet resistance on potential-induced degradation of the shunting type (PID-s). Previously, it has been shown that the cell becomes more PID-s-susceptible as the refractive index decreases or the emitter sheet resistance increases. To verify the effect of refractive index on PID-s, we fabricated cells with varying SiNx refractive index (1.87, 1.94, 2.05) on typical p-type base solar cells with ~60 Ω/sq emitters. However, none of these cells showed output power degradation, regardless of the refractive index. Further investigation of the emitter showed that the PID-s was suppressed at ~60 Ω/sq due to the extremely high surface phosphorus concentration (6 x 1021 cm-3), as measured by secondary ion mass spectrometry. Furthermore, PID-s was observed on cells possessing a high emitter sheet resistance (~80 Ω/sq). In conclusion, the emitter surface phosphorus concentration plays an important role in determining PID-s susceptibility.},
doi = {10.1109/JPHOTOV.2016.2642952},
journal = {IEEE Journal of Photovoltaics},
number = 2,
volume = 7,
place = {United States},
year = {Wed Jan 11 00:00:00 EST 2017},
month = {Wed Jan 11 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

Save / Share: