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Title: Ultra-fast silicon detectors (UFSD)

Authors:
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Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1359651
Grant/Contract Number:
FG02-04ER41286; FPA2013-48308-C2-2-P; FPA2013-48387-C6-2-P; 654168
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Additional Journal Information:
Journal Volume: 831; Journal Issue: C; Related Information: CHORUS Timestamp: 2017-10-04 21:52:46; Journal ID: ISSN 0168-9002
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Sadrozinski, H. F. -W., Anker, A., Chen, J., Fadeyev, V., Freeman, P., Galloway, Z., Gruey, B., Grabas, H., John, C., Liang, Z., Losakul, R., Mak, S. N., Ng, C. W., Seiden, A., Woods, N., Zatserklyaniy, A., Baldassarri, B., Cartiglia, N., Cenna, F., Ferrero, M., Pellegrini, G., Hidalgo, S., Baselga, M., Carulla, M., Fernandez-Martinez, P., Flores, D., Merlos, A., Quirion, D., Mikuž, M., Kramberger, G., Cindro, V., Mandić, I., and Zavrtanik, M. Ultra-fast silicon detectors (UFSD). Netherlands: N. p., 2016. Web. doi:10.1016/j.nima.2016.03.093.
Sadrozinski, H. F. -W., Anker, A., Chen, J., Fadeyev, V., Freeman, P., Galloway, Z., Gruey, B., Grabas, H., John, C., Liang, Z., Losakul, R., Mak, S. N., Ng, C. W., Seiden, A., Woods, N., Zatserklyaniy, A., Baldassarri, B., Cartiglia, N., Cenna, F., Ferrero, M., Pellegrini, G., Hidalgo, S., Baselga, M., Carulla, M., Fernandez-Martinez, P., Flores, D., Merlos, A., Quirion, D., Mikuž, M., Kramberger, G., Cindro, V., Mandić, I., & Zavrtanik, M. Ultra-fast silicon detectors (UFSD). Netherlands. doi:10.1016/j.nima.2016.03.093.
Sadrozinski, H. F. -W., Anker, A., Chen, J., Fadeyev, V., Freeman, P., Galloway, Z., Gruey, B., Grabas, H., John, C., Liang, Z., Losakul, R., Mak, S. N., Ng, C. W., Seiden, A., Woods, N., Zatserklyaniy, A., Baldassarri, B., Cartiglia, N., Cenna, F., Ferrero, M., Pellegrini, G., Hidalgo, S., Baselga, M., Carulla, M., Fernandez-Martinez, P., Flores, D., Merlos, A., Quirion, D., Mikuž, M., Kramberger, G., Cindro, V., Mandić, I., and Zavrtanik, M. Thu . "Ultra-fast silicon detectors (UFSD)". Netherlands. doi:10.1016/j.nima.2016.03.093.
@article{osti_1359651,
title = {Ultra-fast silicon detectors (UFSD)},
author = {Sadrozinski, H. F. -W. and Anker, A. and Chen, J. and Fadeyev, V. and Freeman, P. and Galloway, Z. and Gruey, B. and Grabas, H. and John, C. and Liang, Z. and Losakul, R. and Mak, S. N. and Ng, C. W. and Seiden, A. and Woods, N. and Zatserklyaniy, A. and Baldassarri, B. and Cartiglia, N. and Cenna, F. and Ferrero, M. and Pellegrini, G. and Hidalgo, S. and Baselga, M. and Carulla, M. and Fernandez-Martinez, P. and Flores, D. and Merlos, A. and Quirion, D. and Mikuž, M. and Kramberger, G. and Cindro, V. and Mandić, I. and Zavrtanik, M.},
abstractNote = {},
doi = {10.1016/j.nima.2016.03.093},
journal = {Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment},
number = C,
volume = 831,
place = {Netherlands},
year = {Thu Sep 01 00:00:00 EDT 2016},
month = {Thu Sep 01 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1016/j.nima.2016.03.093

Citation Metrics:
Cited by: 8works
Citation information provided by
Web of Science

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  • In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 μm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are based on the Low- Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm 2. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup includedmore » three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.« less
    Cited by 5
  • In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 μm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are based on the Low- Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm 2. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup includedmore » three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.« less
  • Characteristics of the silicon junction detector and some examples of its applications to radiation detection are described. The range of effective detection was improved and its application to BETA and gamma measurements was expanded. Work was carried out toward the development of a series of radiation detectors including a lithium-ion drifted silicon (germanium) detector. (auth)
  • Real time radiation dose measurements are challenging in high dose rate environments such as those used for testing electronic devices or biological agents. Dosimetry needs in pulsed reactor fields and particle accelerator facilities require development of dosimeters with fast (10 s of picoseconds) response to pulsed radiation, linear response over a wide range of dose rates (up to 10{sup 11} Gy/s), high resistance to radiation damage, and successful operation in mixed gamma and neutron environments. Gallium arsenide photoconductive detectors (GaAs PCD) have been shown to exhibit many of these desirable characteristics, especially fast time response. Less than 50 ps timemore » resolution has been demonstrated when previously irradiated by fission neutrons. We have conducted a study of the response-time dependence on neutron fluence, starting with fluences at {approx}10{sup 14} n/cm{sup 2}. A 23-MeV electron beam was used to produce photoneutrons in a tungsten target for irradiation of a GaAs wafer from which PCDs were made. The process was modeled using MCNPX computer code and the simulation results were compared to the experimental measurements. GaAs PCDs were fabricated from both neutron-irradiated and non-irradiated GaAs samples. The results of the preliminary tests of these devices in accelerator-produced pulses of electron and bremsstrahlung radiation of various energies (13 to 35 MeV) and pulse lengths (100 ps to 4 {mu}s) are presented together with an overview of the future plans of continuing GaAs PCD research at Idaho State University.« less
  • A new radiation imaging device is proposed based on strips segmented into small pixels. Every pixel contains a submicron transistor that is normally biased in weak inversion. The ionization charge, upon collection by the pixel, changes the bias of the transistor to strong inversion and supplies a current up to several tens of a {micro}A. This is a consequence of the small pixel capacitance (12 fF). The drains and sources of the transistors on the same row and column are shorted to bus lines that effectively become the Y and X coordinates. These bus lines are connected to the offmore » chip ICON amplifiers to provide a 10 ns peaking time at a noise of about 150 electrons and 1 nW power consumption, for a 10x10 cm{sup 2} detector and a MIP excitation. The noise performance is dominated by the ICON transistors. The cross talk between adjacent strips can be kept at a few percentage points provided a low transistor bias current is used.« less