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Title: Wafer scale oblique angle plasma etching

Abstract

Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.

Inventors:
; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1358227
Patent Number(s):
9,659,797
Application Number:
14/489,362
Assignee:
Sandia Corporation SNL-A
DOE Contract Number:
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Sep 17
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Burckel, David Bruce, Jarecki, Jr., Robert L., and Finnegan, Patrick Sean. Wafer scale oblique angle plasma etching. United States: N. p., 2017. Web.
Burckel, David Bruce, Jarecki, Jr., Robert L., & Finnegan, Patrick Sean. Wafer scale oblique angle plasma etching. United States.
Burckel, David Bruce, Jarecki, Jr., Robert L., and Finnegan, Patrick Sean. Tue . "Wafer scale oblique angle plasma etching". United States. doi:. https://www.osti.gov/servlets/purl/1358227.
@article{osti_1358227,
title = {Wafer scale oblique angle plasma etching},
author = {Burckel, David Bruce and Jarecki, Jr., Robert L. and Finnegan, Patrick Sean},
abstractNote = {Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 23 00:00:00 EDT 2017},
month = {Tue May 23 00:00:00 EDT 2017}
}

Patent:

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