Magnetic field-induced Fermi surface reconstruction and quantum criticality in CeRhIn5
- Zhejiang Univ., Hangzhou (China)
- Florida State Univ., Tallahassee, FL (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Zhejiang Univ., Hangzhou (China); Center for Advanced Microstructures, Nanjing (China)
Here, we present detailed results of the field evolution of the de Haas–van Alphen (dHvA) effect in CeRhIn5. A magnetic field-induced reconstruction of the Fermi surface is clearly shown to occur inside the antiferromagnetic state, in an applied field of around B* ≃ 30 T, which is evidenced by the appearance of several new dHvA branches. The angular dependence of the dHvA frequencies reveals that the Fermi surfaces of CeRhIn5 at B > B* and CeCoIn5 are similar. The results suggest that the Ce-4f electrons in become itinerant at B > B* due to the Kondo effect, prior to the field-induced quantum critical point (QCP) at Bc0 ≃ 50 T. The electronic states at the field-induced QCP are therefore different from that of the pressure-induced QCP where a dramatic Fermi surface reconstruction occurs exactly at the critical pressure, indicating that multiple types of QCP may exist in CeRhIn5.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC). Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- AC52-06NA25396
- OSTI ID:
- 1358159
- Report Number(s):
- LA-UR-16-24461
- Journal Information:
- Philosophical Magazine (2003, Print), Vol. 97, Issue 36; ISSN 1478-6435
- Publisher:
- Taylor & FrancisCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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