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Title: Electrically coupling complex oxides to semiconductors: A route to novel material functionalities

Abstract

Complex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling complex oxides to traditional semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Essential to electrically coupling complex oxides to semiconductors is control of the physical structure of the epitaxially grown oxide, as well as the electronic structure of the interface. In this paper, we discuss how composition of the perovskite A- and B-site cations can be manipulated to control the physical and electronic structure of semiconductor—complex oxide heterostructures. Two prototypical heterostructures, Ba 1-xSr xTiO 3/Ge and SrZr xTi 1-xO 3/Ge, will be discussed. In the case of Ba 1-xSr xTiO 3/Ge, we discuss how strain can be engineered through A-site composition to enable the re-orientable ferroelectric polarization of the former to be coupled to carriers in the semiconductor. In the case of SrZr xTi 1-xO 3/Ge we discuss how B-site composition can be exploited to control the band offset at the interface. Finally, analogous to heterojunctions between compound semiconducting materials, control of band offsets, i.e., band-gap engineering, provides a pathway to electrically couple complex oxides to semiconductors to realize amore » host of functionalities.« less

Authors:
 [1];  [1];  [1];  [1];  [2];  [2];  [2];  [3];  [3];  [3];  [4];  [5];  [5]
  1. Univ. of Texas, Arlington, TX (United States). Dept. of Physics
  2. Yale Univ., New Haven, CT (United States). Dept. of Applied Physics. Center for Research on Interface Structures and Phenomena
  3. Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical Sciences Division
  4. Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Enviromental Molecular Sciences Lab.
  5. Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States); Univ. of Texas, Arlington, TX (United States); Yale Univ., New Haven, CT (United States); Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Office of Science (SC), Biological and Environmental Research (BER) (SC-23); National Science Foundation (NSF)
OSTI Identifier:
1358030
Report Number(s):
BNL-113868-2017-JA
Journal ID: ISSN 0884-2914; R&D Project: 16060; 16060; KC0403020
Grant/Contract Number:
AC02-98CH10886; DMR-1508530; DMR-1309868
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Materials Research
Additional Journal Information:
Journal Volume: 32; Journal Issue: 2; Journal ID: ISSN 0884-2914
Publisher:
Materials Research Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; complex oxides; heterostructure; molecular beam epitaxy

Citation Formats

Ngai, J. H., Ahmadi-Majlan, K., Moghadam, J., Chrysler, M., Kumah, D., Walker, F. J., Ahn, C. H., Droubay, T., Du, Y., Chambers, S. A., Bowden, M., Shen, X., and Su, D. Electrically coupling complex oxides to semiconductors: A route to novel material functionalities. United States: N. p., 2017. Web. doi:10.1557/jmr.2016.496.
Ngai, J. H., Ahmadi-Majlan, K., Moghadam, J., Chrysler, M., Kumah, D., Walker, F. J., Ahn, C. H., Droubay, T., Du, Y., Chambers, S. A., Bowden, M., Shen, X., & Su, D. Electrically coupling complex oxides to semiconductors: A route to novel material functionalities. United States. doi:10.1557/jmr.2016.496.
Ngai, J. H., Ahmadi-Majlan, K., Moghadam, J., Chrysler, M., Kumah, D., Walker, F. J., Ahn, C. H., Droubay, T., Du, Y., Chambers, S. A., Bowden, M., Shen, X., and Su, D. Thu . "Electrically coupling complex oxides to semiconductors: A route to novel material functionalities". United States. doi:10.1557/jmr.2016.496. https://www.osti.gov/servlets/purl/1358030.
@article{osti_1358030,
title = {Electrically coupling complex oxides to semiconductors: A route to novel material functionalities},
author = {Ngai, J. H. and Ahmadi-Majlan, K. and Moghadam, J. and Chrysler, M. and Kumah, D. and Walker, F. J. and Ahn, C. H. and Droubay, T. and Du, Y. and Chambers, S. A. and Bowden, M. and Shen, X. and Su, D.},
abstractNote = {Complex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling complex oxides to traditional semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Essential to electrically coupling complex oxides to semiconductors is control of the physical structure of the epitaxially grown oxide, as well as the electronic structure of the interface. In this paper, we discuss how composition of the perovskite A- and B-site cations can be manipulated to control the physical and electronic structure of semiconductor—complex oxide heterostructures. Two prototypical heterostructures, Ba1-xSrxTiO3/Ge and SrZrxTi1-xO3/Ge, will be discussed. In the case of Ba1-xSrxTiO3/Ge, we discuss how strain can be engineered through A-site composition to enable the re-orientable ferroelectric polarization of the former to be coupled to carriers in the semiconductor. In the case of SrZrxTi1-xO3/Ge we discuss how B-site composition can be exploited to control the band offset at the interface. Finally, analogous to heterojunctions between compound semiconducting materials, control of band offsets, i.e., band-gap engineering, provides a pathway to electrically couple complex oxides to semiconductors to realize a host of functionalities.},
doi = {10.1557/jmr.2016.496},
journal = {Journal of Materials Research},
number = 2,
volume = 32,
place = {United States},
year = {Thu Jan 12 00:00:00 EST 2017},
month = {Thu Jan 12 00:00:00 EST 2017}
}

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