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Title: Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1357832
Grant/Contract Number:
FG52-09NA29358
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Radiation Measurements
Additional Journal Information:
Journal Volume: 91; Journal Issue: C; Related Information: CHORUS Timestamp: 2017-10-04 09:45:29; Journal ID: ISSN 1350-4487
Publisher:
Elsevier
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Gokhale, Sasmit S., Han, HyukSu, Pelaez, Oswaldo, Baciak, James E., Nino, Juan C., and Jordan, Kelly A. Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors. United Kingdom: N. p., 2016. Web. doi:10.1016/j.radmeas.2016.04.004.
Gokhale, Sasmit S., Han, HyukSu, Pelaez, Oswaldo, Baciak, James E., Nino, Juan C., & Jordan, Kelly A. Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors. United Kingdom. doi:10.1016/j.radmeas.2016.04.004.
Gokhale, Sasmit S., Han, HyukSu, Pelaez, Oswaldo, Baciak, James E., Nino, Juan C., and Jordan, Kelly A. 2016. "Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors". United Kingdom. doi:10.1016/j.radmeas.2016.04.004.
@article{osti_1357832,
title = {Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors},
author = {Gokhale, Sasmit S. and Han, HyukSu and Pelaez, Oswaldo and Baciak, James E. and Nino, Juan C. and Jordan, Kelly A.},
abstractNote = {},
doi = {10.1016/j.radmeas.2016.04.004},
journal = {Radiation Measurements},
number = C,
volume = 91,
place = {United Kingdom},
year = 2016,
month = 8
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1016/j.radmeas.2016.04.004

Citation Metrics:
Cited by: 1work
Citation information provided by
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