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Title: Hidden Interface Driven Exchange Coupling in Oxide Heterostructures

Abstract

In a variety of emergent phenomena have been enabled by interface engineering in complex oxides. The existence of an intrinsic interfacial layer has often been found at oxide heterointerfaces. But, the role of such an interlayerin controlling functionalities is not fully explored. Here, we report the control of the exchange bias (EB) in single-phase manganite thin films with nominallyuniform chemical composition across the interfaces. The sign of EB depends on the magnitude of the cooling field. A pinned layer, confirmed by polarized neutron reflectometry, provides the source of unidirectional anisotropy. The origin of the exchange bias coupling is discussed in terms of magnetic interactions between the interfacial ferromagnetically reduced layer and the bulk ferromagnetic region. The sign of EB is related to the frustration of antiferromagnetic coupling between the ferromagnetic region and the pinned layer. These results shed new light on using oxide interfaces to design functional spintronic devices.

Authors:
ORCiD logo [1];  [2];  [3]; ORCiD logo [1];  [1];  [1];  [1];  [1];  [1];  [4]; ORCiD logo [1];  [5]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; West Virginia Univ., Morgantown, WV (United States). Dept. of Physics and Astronomy
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Quantum Condensed Matter Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy
  4. Univ. of Cambridge (United Kingdom). Dept. of Materials Science
  5. Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies; Univ. of Buffalo, NY (United States). Dept. of Materials Design and Innovation
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC)
OSTI Identifier:
1357117
Alternate Identifier(s):
OSTI ID: 1361327; OSTI ID: 1401298
Report Number(s):
LA-UR-16-23418
Journal ID: ISSN 0935-9648
Grant/Contract Number:  
AC52-06NA25396; AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 29; Journal Issue: 26; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; eptiaxial thin films; interface; magnetism; polarized neutron reflectometry; epitaxial thin films; polarized neutron reflectrometry

Citation Formats

Chen, Aiping, Wang, Qiang, Fitzsimmons, Michael R., Enriquez, Erik, Weigand, Marcus, Harrell, Zach, McFarland, Brian, Lü, Xujie, Dowden, Paul, MacManus-Driscoll, Judith L., Yarotski, Dmitry, and Jia, Quanxi. Hidden Interface Driven Exchange Coupling in Oxide Heterostructures. United States: N. p., 2017. Web. doi:10.1002/adma.201700672.
Chen, Aiping, Wang, Qiang, Fitzsimmons, Michael R., Enriquez, Erik, Weigand, Marcus, Harrell, Zach, McFarland, Brian, Lü, Xujie, Dowden, Paul, MacManus-Driscoll, Judith L., Yarotski, Dmitry, & Jia, Quanxi. Hidden Interface Driven Exchange Coupling in Oxide Heterostructures. United States. doi:10.1002/adma.201700672.
Chen, Aiping, Wang, Qiang, Fitzsimmons, Michael R., Enriquez, Erik, Weigand, Marcus, Harrell, Zach, McFarland, Brian, Lü, Xujie, Dowden, Paul, MacManus-Driscoll, Judith L., Yarotski, Dmitry, and Jia, Quanxi. Tue . "Hidden Interface Driven Exchange Coupling in Oxide Heterostructures". United States. doi:10.1002/adma.201700672. https://www.osti.gov/servlets/purl/1357117.
@article{osti_1357117,
title = {Hidden Interface Driven Exchange Coupling in Oxide Heterostructures},
author = {Chen, Aiping and Wang, Qiang and Fitzsimmons, Michael R. and Enriquez, Erik and Weigand, Marcus and Harrell, Zach and McFarland, Brian and Lü, Xujie and Dowden, Paul and MacManus-Driscoll, Judith L. and Yarotski, Dmitry and Jia, Quanxi},
abstractNote = {In a variety of emergent phenomena have been enabled by interface engineering in complex oxides. The existence of an intrinsic interfacial layer has often been found at oxide heterointerfaces. But, the role of such an interlayerin controlling functionalities is not fully explored. Here, we report the control of the exchange bias (EB) in single-phase manganite thin films with nominallyuniform chemical composition across the interfaces. The sign of EB depends on the magnitude of the cooling field. A pinned layer, confirmed by polarized neutron reflectometry, provides the source of unidirectional anisotropy. The origin of the exchange bias coupling is discussed in terms of magnetic interactions between the interfacial ferromagnetically reduced layer and the bulk ferromagnetic region. The sign of EB is related to the frustration of antiferromagnetic coupling between the ferromagnetic region and the pinned layer. These results shed new light on using oxide interfaces to design functional spintronic devices.},
doi = {10.1002/adma.201700672},
journal = {Advanced Materials},
number = 26,
volume = 29,
place = {United States},
year = {Tue May 02 00:00:00 EDT 2017},
month = {Tue May 02 00:00:00 EDT 2017}
}

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Works referenced in this record:

Two-Dimensional Quantum Oscillations of the Conductance at LaAlO3/SrTiO3Interfaces
journal, December 2010