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Title: Real-Time Observation of Atomic Layer Deposition Inhibition: Metal Oxide Growth on Self-Assembled Alkanethiols

Abstract

Through in-situ quartz crystal microbalance (QCM) monitoring we resolve the growth of a self-assembled monolayer (SAM) and subsequent metal oxide deposition with high resolution. Here, we introduce the fitting of mass deposited during each atomic layer deposition (ALD) cycle to an analytical island-growth model that enables quantification of growth inhibition, nucleation density, and the uninhibited ALD growth rate. A long-chain alkanethiol was self-assembled as a monolayer on gold-coated quartz crystals in order to investigate its effectiveness as a barrier to ALD. Compared to solution-loading, vapor-loading is observed to produce a SAM with equal or greater inhibition-ability in minutes vs. days. The metal oxide growth temperature and the choice of precursor also significantly affect the nucleation density, which ranges from 0.001 to 1 sites/nm 2. Finally, we observe a minimum 100 cycle inhibition of an oxide ALD process, ZnO, under moderately optimized conditions.

Authors:
 [1];  [1];  [2];  [1];  [3];  [1];  [3]
  1. Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  3. Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry; Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1357040
Grant/Contract Number:
AC02-06CH11357; SC0001059
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 6; Journal Issue: 15; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; alkanethiol; analytical methods; atomic layer deposition; in situ; quartz crystal microbalance; self-assembled monolayers

Citation Formats

Avila, Jason R., DeMarco, Erica J., Emery, Jonathan D., Farha, Omar K., Pellin, Michael J., Hupp, Joseph T., and Martinson, Alex B. F. Real-Time Observation of Atomic Layer Deposition Inhibition: Metal Oxide Growth on Self-Assembled Alkanethiols. United States: N. p., 2014. Web. doi:10.1021/am503008j.
Avila, Jason R., DeMarco, Erica J., Emery, Jonathan D., Farha, Omar K., Pellin, Michael J., Hupp, Joseph T., & Martinson, Alex B. F. Real-Time Observation of Atomic Layer Deposition Inhibition: Metal Oxide Growth on Self-Assembled Alkanethiols. United States. doi:10.1021/am503008j.
Avila, Jason R., DeMarco, Erica J., Emery, Jonathan D., Farha, Omar K., Pellin, Michael J., Hupp, Joseph T., and Martinson, Alex B. F. Mon . "Real-Time Observation of Atomic Layer Deposition Inhibition: Metal Oxide Growth on Self-Assembled Alkanethiols". United States. doi:10.1021/am503008j. https://www.osti.gov/servlets/purl/1357040.
@article{osti_1357040,
title = {Real-Time Observation of Atomic Layer Deposition Inhibition: Metal Oxide Growth on Self-Assembled Alkanethiols},
author = {Avila, Jason R. and DeMarco, Erica J. and Emery, Jonathan D. and Farha, Omar K. and Pellin, Michael J. and Hupp, Joseph T. and Martinson, Alex B. F.},
abstractNote = {Through in-situ quartz crystal microbalance (QCM) monitoring we resolve the growth of a self-assembled monolayer (SAM) and subsequent metal oxide deposition with high resolution. Here, we introduce the fitting of mass deposited during each atomic layer deposition (ALD) cycle to an analytical island-growth model that enables quantification of growth inhibition, nucleation density, and the uninhibited ALD growth rate. A long-chain alkanethiol was self-assembled as a monolayer on gold-coated quartz crystals in order to investigate its effectiveness as a barrier to ALD. Compared to solution-loading, vapor-loading is observed to produce a SAM with equal or greater inhibition-ability in minutes vs. days. The metal oxide growth temperature and the choice of precursor also significantly affect the nucleation density, which ranges from 0.001 to 1 sites/nm2. Finally, we observe a minimum 100 cycle inhibition of an oxide ALD process, ZnO, under moderately optimized conditions.},
doi = {10.1021/am503008j},
journal = {ACS Applied Materials and Interfaces},
number = 15,
volume = 6,
place = {United States},
year = {Mon Jul 21 00:00:00 EDT 2014},
month = {Mon Jul 21 00:00:00 EDT 2014}
}

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Cited by: 15works
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