Atomic Scale Dynamics of Contact Formation in the Cross-Section of InGaAs Nanowire Channels
Abstract
In the alloyed and compound contacts between metal and semiconductor transistor channels we see that they enable self-aligned gate processes which play a significant role in transistor scaling. At nanoscale dimensions and for nanowire channels, prior experiments focused on reactions along the channel length, but the early stage of reaction in their cross sections remains unknown. We report on the dynamics of the solid-state reaction between metal (Ni) and semiconductor (In0.53Ga0.47As), along the cross-section of nanowires that are 15 nm in width. Unlike planar structures where crystalline nickelide readily forms at conventional, low alloying temperatures, nanowires exhibit a solid-state amorphization step that can undergo a crystal regrowth step at elevated temperatures. Here, we capture the layer-by-layer reaction mechanism and growth rate anisotropy using in situ transmission electron microscopy (TEM). Our kinetic model depicts this new, in-plane contact formation which could pave the way for engineered nanoscale transistors.
- Authors:
-
- Univ. of California, San Diego, CA (United States). Dept. of Electrical and Computer Engineering
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
- Univ. of California, San Diego, CA (United States). Dept. of Electrical and Computer Engineering and Materials Science and Engineering Program and Dept. of NanoEngineering
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- OSTI Identifier:
- 1357020
- Alternate Identifier(s):
- OSTI ID: 1361650
- Report Number(s):
- SAND2017-2000J; SAND-2016-9942J
Journal ID: ISSN 1530-6984; 651278
- Grant/Contract Number:
- AC04-94AL85000; AC52-06NA25396
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Volume: 17; Journal Issue: 4; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; amorphization; In situ TEM; InGaAs; nanowire; nickelide; recrystallization
Citation Formats
Chen, Renjie, Jungjohann, Katherine L., Mook, William M., Nogan, John, and Dayeh, Shadi A. Atomic Scale Dynamics of Contact Formation in the Cross-Section of InGaAs Nanowire Channels. United States: N. p., 2017.
Web. doi:10.1021/acs.nanolett.6b04713.
Chen, Renjie, Jungjohann, Katherine L., Mook, William M., Nogan, John, & Dayeh, Shadi A. Atomic Scale Dynamics of Contact Formation in the Cross-Section of InGaAs Nanowire Channels. United States. https://doi.org/10.1021/acs.nanolett.6b04713
Chen, Renjie, Jungjohann, Katherine L., Mook, William M., Nogan, John, and Dayeh, Shadi A. 2017.
"Atomic Scale Dynamics of Contact Formation in the Cross-Section of InGaAs Nanowire Channels". United States. https://doi.org/10.1021/acs.nanolett.6b04713. https://www.osti.gov/servlets/purl/1357020.
@article{osti_1357020,
title = {Atomic Scale Dynamics of Contact Formation in the Cross-Section of InGaAs Nanowire Channels},
author = {Chen, Renjie and Jungjohann, Katherine L. and Mook, William M. and Nogan, John and Dayeh, Shadi A.},
abstractNote = {In the alloyed and compound contacts between metal and semiconductor transistor channels we see that they enable self-aligned gate processes which play a significant role in transistor scaling. At nanoscale dimensions and for nanowire channels, prior experiments focused on reactions along the channel length, but the early stage of reaction in their cross sections remains unknown. We report on the dynamics of the solid-state reaction between metal (Ni) and semiconductor (In0.53Ga0.47As), along the cross-section of nanowires that are 15 nm in width. Unlike planar structures where crystalline nickelide readily forms at conventional, low alloying temperatures, nanowires exhibit a solid-state amorphization step that can undergo a crystal regrowth step at elevated temperatures. Here, we capture the layer-by-layer reaction mechanism and growth rate anisotropy using in situ transmission electron microscopy (TEM). Our kinetic model depicts this new, in-plane contact formation which could pave the way for engineered nanoscale transistors.},
doi = {10.1021/acs.nanolett.6b04713},
url = {https://www.osti.gov/biblio/1357020},
journal = {Nano Letters},
issn = {1530-6984},
number = 4,
volume = 17,
place = {United States},
year = {Thu Mar 23 00:00:00 EDT 2017},
month = {Thu Mar 23 00:00:00 EDT 2017}
}
Web of Science
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