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Title: Low-temperature atomic layer deposition of CuSbS 2 for thin-film photovoltaics

Abstract

Copper antimony sulfide (CuSbS 2) has been gaining traction as an earth-abundant absorber for thin-film photovoltaics given its near ideal band gap for solar energy conversion (~1.5 eV), large absorption coefficient (>10 4 cm –1), and elemental abundance. Through careful in situ analysis of the deposition conditions, a low-temperature route to CuSbS 2 thin films via atomic layer deposition has been developed. After a short (15 min) post process anneal at 225 °C, the ALD-grown CuSbS 2 films were crystalline with micron-sized grains, exhibited a band gap of 1.6 eV and an absorption coefficient >10 4 cm –1, as well as a hole concentration of 10 15 cm –3. Finally, the ALD-grown CuSbS 2 films were paired with ALD-grown TiO 2 to form a photovoltaic device. This photovoltaic device architecture represents one of a very limited number of Cd-free CuSbS 2 PV device stacks reported to date, and it is the first to demonstrate an open-circuit voltage on par with CuSbS 2/CdS heterojunction PV devices. As a result, while far from optimized, this work demonstrates the potential for ALD-grown CuSbS 2 thin films in environmentally benign photovoltaics.

Authors:
ORCiD logo [1];  [1]; ORCiD logo [2];  [3]; ORCiD logo [3]
  1. Univ. of Wisconsin-Stevens Point, Stevens Point, WI (United States)
  2. Northwestern Univ., Evanston, IL (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
  3. Argonne National Lab. (ANL), Argonne, IL (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Office of Science (SC), Workforce Development for Teachers and Scientists (WDTS) (SC-27); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1356821
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 9; Journal Issue: 5; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; ternary metal sulfide; copper antimony sulfide; CuSbS2; atomic layer deposition; photovoltaics; thin film; thin film solar cell

Citation Formats

Riha, Shannon C., Koegel, Alexandra A., Emery, Jonathan D., Pellin, Michael J., and Martinson, Alex B. F. Low-temperature atomic layer deposition of CuSbS2 for thin-film photovoltaics. United States: N. p., 2017. Web. doi:10.1021/acsami.6b13033.
Riha, Shannon C., Koegel, Alexandra A., Emery, Jonathan D., Pellin, Michael J., & Martinson, Alex B. F. Low-temperature atomic layer deposition of CuSbS2 for thin-film photovoltaics. United States. doi:10.1021/acsami.6b13033.
Riha, Shannon C., Koegel, Alexandra A., Emery, Jonathan D., Pellin, Michael J., and Martinson, Alex B. F. Tue . "Low-temperature atomic layer deposition of CuSbS2 for thin-film photovoltaics". United States. doi:10.1021/acsami.6b13033. https://www.osti.gov/servlets/purl/1356821.
@article{osti_1356821,
title = {Low-temperature atomic layer deposition of CuSbS2 for thin-film photovoltaics},
author = {Riha, Shannon C. and Koegel, Alexandra A. and Emery, Jonathan D. and Pellin, Michael J. and Martinson, Alex B. F.},
abstractNote = {Copper antimony sulfide (CuSbS2) has been gaining traction as an earth-abundant absorber for thin-film photovoltaics given its near ideal band gap for solar energy conversion (~1.5 eV), large absorption coefficient (>104 cm–1), and elemental abundance. Through careful in situ analysis of the deposition conditions, a low-temperature route to CuSbS2 thin films via atomic layer deposition has been developed. After a short (15 min) post process anneal at 225 °C, the ALD-grown CuSbS2 films were crystalline with micron-sized grains, exhibited a band gap of 1.6 eV and an absorption coefficient >104 cm–1, as well as a hole concentration of 1015 cm–3. Finally, the ALD-grown CuSbS2 films were paired with ALD-grown TiO2 to form a photovoltaic device. This photovoltaic device architecture represents one of a very limited number of Cd-free CuSbS2 PV device stacks reported to date, and it is the first to demonstrate an open-circuit voltage on par with CuSbS2/CdS heterojunction PV devices. As a result, while far from optimized, this work demonstrates the potential for ALD-grown CuSbS2 thin films in environmentally benign photovoltaics.},
doi = {10.1021/acsami.6b13033},
journal = {ACS Applied Materials and Interfaces},
number = 5,
volume = 9,
place = {United States},
year = {Tue Jan 24 00:00:00 EST 2017},
month = {Tue Jan 24 00:00:00 EST 2017}
}

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