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Title: Ferroionic states in ferroelectric thin films

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Publication Date:
Sponsoring Org.:
OSTI Identifier:
Grant/Contract Number:
ERKCZ07; AC0500OR22725
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 19; Related Information: CHORUS Timestamp: 2017-05-11 22:09:33; Journal ID: ISSN 2469-9950
American Physical Society
Country of Publication:
United States

Citation Formats

Morozovska, Anna N., Eliseev, Eugene A., Morozovsky, Nicholas V., and Kalinin, Sergei V. Ferroionic states in ferroelectric thin films. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.195413.
Morozovska, Anna N., Eliseev, Eugene A., Morozovsky, Nicholas V., & Kalinin, Sergei V. Ferroionic states in ferroelectric thin films. United States. doi:10.1103/PhysRevB.95.195413.
Morozovska, Anna N., Eliseev, Eugene A., Morozovsky, Nicholas V., and Kalinin, Sergei V. Thu . "Ferroionic states in ferroelectric thin films". United States. doi:10.1103/PhysRevB.95.195413.
title = {Ferroionic states in ferroelectric thin films},
author = {Morozovska, Anna N. and Eliseev, Eugene A. and Morozovsky, Nicholas V. and Kalinin, Sergei V.},
abstractNote = {},
doi = {10.1103/PhysRevB.95.195413},
journal = {Physical Review B},
number = 19,
volume = 95,
place = {United States},
year = {Thu May 11 00:00:00 EDT 2017},
month = {Thu May 11 00:00:00 EDT 2017}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.95.195413

Citation Metrics:
Cited by: 6works
Citation information provided by
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  • Nonlinear electrostatic interaction between the surface ions of electrochemical nature and ferroelectric dipoles gives rise to the coupled ferroionic states in nanoscale ferroelectrics. Here, we investigated the role of the surface ions formation energy value on the polarization states and polarization reversal mechanisms, domain structure and corresponding phase diagrams of ferroelectric thin films. Using 3D finite elements modeling we analyze the distribution and hysteresis loops of ferroelectric polarization and ionic charge, and dynamics of the domain states. These calculations performed over large parameter space delineate the regions of single- and poly- domain ferroelectric, ferroionic, antiferroionic and non-ferroelectric states as amore » function of surface ions formation energy, film thickness, applied voltage and temperature. We further map the analytical theory for 1D system onto effective Landau-Ginzburg free energy and establish the correspondence between the 3D numerical and 1D analytical results. In conclusion, this approach allows performing the overview of the ferroionic system phase diagrams and exploring the specifics of switching and domain evolution phenomena.« less
  • The results of the fabrication and characterization of ferroelectric (Pb{sub 0.8}Ba{sub 0.2})ZrO{sub 3} (PBZ) thin films grown on nitrided silicon substrates with a (Ba{sub 0.5}Sr{sub 0.5})TiO{sub 3} (BST) buffer layer by the rf-magnetron sputtering technique are reported. The PBZ thin films were used as the ferroelectric layer in the ferroelectric field effect transistors. The PBZ thin films were grown with highly (100) preferred orientation on BST buffer layers. The Auger electron spectroscopy depth profiles showed no significant interdiffusion between the PBZ and silicon components. The capacitance-voltage properties of Pt/PBZ (360 nm)/BST (30 nm)/Si structures demonstrated ferroelectric switching effect. The memorymore » windows were about 0.6, 1.25, and 1.76 V, respectively, for sweeping bias of {+-}3, {+-}4, and {+-}5 V. The leakage current density was below 1x10{sup -8} A/cm{sup 2} at {+-}4 V.« less
  • We report on the observation of the critical thickness of crystallization of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer thin films, which were solution spun cast on platinum coated silicon wafer. The effect occurs at about 100 nm thickness, which is significantly above any currently known spatial dimensions of the polymer, so that for films at thickness below about 100 nm, the crystallization process is strongly hindered, resulting in a low crystallinity in these films. This low crystallinity leads to a large and discontinuous change of the dielectric constant and ferroelectric polarization in the films below the critical thickness.
  • For many microelectronic and optoelectronic applications, organic thin films with controlled, polar orientation of functional groups relative to a substrate surface hold great potential. Several possible solutions of this problem are currently under active investigation, including the growth of single crystal films, polar deposition of Langmuir-Blodgett multilayers, electrically poled polymer films, and self-assembled multilayers. In this communication, we describe a new approach for achieving designed organic thin films with thermodynamically stable, polar orientation of functional groups using ferroelectric liquid crystal polymers (FLCPs).