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Title: Method of making dielectric capacitors with increased dielectric breakdown strength

Abstract

The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

Inventors:
; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1356201
Patent Number(s):
9,646,766
Application Number:
13/523,335
Assignee:
UChicago Argonne, LLC ANL
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Jun 14
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Ma, Beihai, Balachandran, Uthamalingam, and Liu, Shanshan. Method of making dielectric capacitors with increased dielectric breakdown strength. United States: N. p., 2017. Web.
Ma, Beihai, Balachandran, Uthamalingam, & Liu, Shanshan. Method of making dielectric capacitors with increased dielectric breakdown strength. United States.
Ma, Beihai, Balachandran, Uthamalingam, and Liu, Shanshan. Tue . "Method of making dielectric capacitors with increased dielectric breakdown strength". United States. doi:. https://www.osti.gov/servlets/purl/1356201.
@article{osti_1356201,
title = {Method of making dielectric capacitors with increased dielectric breakdown strength},
author = {Ma, Beihai and Balachandran, Uthamalingam and Liu, Shanshan},
abstractNote = {The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 09 00:00:00 EDT 2017},
month = {Tue May 09 00:00:00 EDT 2017}
}

Patent:

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Works referenced in this record:

High dielectric constant of SrTiO3 thin films prepared by chemical process
journal, October 2000

  • Pontes, F. M.; Lee, E. J. H.; Leite, E. R.
  • Journal of Materials Science, Vol. 35, Issue 19, p. 4783-4787
  • DOI: 10.1023/A:1004816611050

Voltage and frequency dependent dielectric properties of BST-0.5 thin films on alumina substrates
journal, June 2003

  • Delprat, S.; Ouaddari, M.; Vidal, F.
  • IEEE Microwave and Wireless Components Letters, Vol. 13, Issue 6, p. 211-213
  • DOI: 10.1109/LMWC.2003.814091

Dielectric properties of PLZT film-on-foil capacitors
journal, July 2008


Development of PLZT dielectrics on base metal foils for embedded capacitors
journal, January 2010


Contribution to the understanding of the relationship between mechanical and dielectric strengths of Alumina
journal, November 2010


Models for breakdown-resistant dielectric and ferroelectric ceramics
journal, July 1993


Phase transition and high dielectric constant of bulk dense nanograin barium titanate ceramics
journal, October 2006

  • Wang, Xiaohui; Deng, Xiangyun; Wen, Hai
  • Applied Physics Letters, Vol. 89, Issue 16, 162902
  • DOI: 10.1063/1.2363930

Ferroelectric Ceramics: History and Technology
journal, April 1999


In-plane dielectric properties of epitaxial 0.65Pb(Mg1∕3Nb2∕3)O3−0.35PbTiO3 thin films in a very wide frequency range
journal, August 2004

  • Wang, Y.; Cheng, Y. L.; Cheng, K. C.
  • Applied Physics Letters, Vol. 85, Issue 9, p. 1580-1582
  • DOI: 10.1063/1.1784517

CaCu3Ti4O12: One-step internal barrier layer capacitor
journal, March 2002

  • Sinclair, Derek C.; Adams, Timothy B.; Morrison, Finlay D.
  • Applied Physics Letters, Vol. 80, Issue 12, p. 2153-2155
  • DOI: 10.1063/1.1463211