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Title: Thermally-isolated silicon-based integrated circuits and related methods

Abstract

Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

Inventors:
; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1356199
Patent Number(s):
9,646,874
Application Number:
13/959,136
Assignee:
Sandia Corporation SNL-A
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Aug 05
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING

Citation Formats

Wojciechowski, Kenneth, Olsson, Roy H., Clews, Peggy J., and Bauer, Todd. Thermally-isolated silicon-based integrated circuits and related methods. United States: N. p., 2017. Web.
Wojciechowski, Kenneth, Olsson, Roy H., Clews, Peggy J., & Bauer, Todd. Thermally-isolated silicon-based integrated circuits and related methods. United States.
Wojciechowski, Kenneth, Olsson, Roy H., Clews, Peggy J., and Bauer, Todd. Tue . "Thermally-isolated silicon-based integrated circuits and related methods". United States. https://www.osti.gov/servlets/purl/1356199.
@article{osti_1356199,
title = {Thermally-isolated silicon-based integrated circuits and related methods},
author = {Wojciechowski, Kenneth and Olsson, Roy H. and Clews, Peggy J. and Bauer, Todd},
abstractNote = {Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {5}
}

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Works referenced in this record:

CMOS-SOI-MEMS Transistor for Uncooled IR Imaging
journal, September 2009

  • Gitelman, L.; Stolyarova, S.; Bar-Lev, S.
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Single-chip precision oscillators based on multi-frequency, high-Q aluminum nitride MEMS resonators
conference, June 2009

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  • Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
  • DOI: 10.1109/SENSOR.2009.5285626