Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic topological insulator
- Idaho National Lab. (INL), Idaho Falls, ID (United States)
- National Sun Yat-Sen Univ., Kaohsiung (Taiwan). Dept. of Materials and Optoelectronic Science
- Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
- National Sun Yat-Sen Univ., Kaohsiung (Taiwan). Dept. of Physics
- Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics
- Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Here, weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge carrier concentrations. At low charge carrier density the WAL curves scale with the normal component of the magnetic field, demonstrating the dominance of topological surface states in magnetoconductivity. At high charge carrier density the WAL curves scale with neither the applied field nor its normal component, implying a mixture of bulk and surface conduction. WAL due to topological surface states shows no dependence on the nature (electrons or holes) of the bulk charge carriers. The observations of an extremely large, non-saturating magnetoresistance, and ultrahigh mobility in the samples with lower carrier density further support the presence of surface states. The physical parameters characterizing the WAL effects are calculated using the Hikami-Larkin-Nagaoka formula. At high charge carrier concentrations, there is a greater number of conduction channels and a decrease in the phase coherence length compared to low charge carrier concentrations. The extremely large magnetoresistance and high mobility of topological insulators have great technological value and can be exploited in magneto-electric sensors and memory devices.
- Research Organization:
- Idaho National Laboratory (INL), Idaho Falls, ID (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Nuclear Energy (NE); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; US Air Force Office of Scientific Research (AFOSR); T. L. L. Temple Foundation; J. J. and R. Moores Endowment; National Science Foundation (NSF)
- Grant/Contract Number:
- AC07-05ID14517; DMR-1157490; FG02-01ER45872
- OSTI ID:
- 1402678
- Alternate ID(s):
- OSTI ID: 1355958
- Report Number(s):
- INL/JOU-17-41643; PRBMDO
- Journal Information:
- Physical Review B, Vol. 95, Issue 19; ISSN 2469-9950
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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