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Title: Analysis of loss mechanisms in Ag 2 ZnSnSe 4 Schottky barrier photovoltaics

Authors:
 [1]; ORCiD logo [1];  [1]; ORCiD logo [1];  [1];  [1]; ORCiD logo [2];  [3];  [2];  [1]
  1. IBM TJ Watson Research Center, Yorktown Heights, New York 10598, USA
  2. Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  3. The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1355948
Grant/Contract Number:
EE0006334
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 121; Journal Issue: 17; Related Information: CHORUS Timestamp: 2018-02-14 21:56:50; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Gershon, Talia, Gunawan, Oki, Gokmen, Tayfun, Brew, Kevin W., Singh, Saurabh, Hopstaken, Marinus, Poindexter, Jeremy R., Barnard, Edward S., Buonassisi, Tonio, and Haight, Richard. Analysis of loss mechanisms in Ag 2 ZnSnSe 4 Schottky barrier photovoltaics. United States: N. p., 2017. Web. doi:10.1063/1.4982906.
Gershon, Talia, Gunawan, Oki, Gokmen, Tayfun, Brew, Kevin W., Singh, Saurabh, Hopstaken, Marinus, Poindexter, Jeremy R., Barnard, Edward S., Buonassisi, Tonio, & Haight, Richard. Analysis of loss mechanisms in Ag 2 ZnSnSe 4 Schottky barrier photovoltaics. United States. doi:10.1063/1.4982906.
Gershon, Talia, Gunawan, Oki, Gokmen, Tayfun, Brew, Kevin W., Singh, Saurabh, Hopstaken, Marinus, Poindexter, Jeremy R., Barnard, Edward S., Buonassisi, Tonio, and Haight, Richard. 2017. "Analysis of loss mechanisms in Ag 2 ZnSnSe 4 Schottky barrier photovoltaics". United States. doi:10.1063/1.4982906.
@article{osti_1355948,
title = {Analysis of loss mechanisms in Ag 2 ZnSnSe 4 Schottky barrier photovoltaics},
author = {Gershon, Talia and Gunawan, Oki and Gokmen, Tayfun and Brew, Kevin W. and Singh, Saurabh and Hopstaken, Marinus and Poindexter, Jeremy R. and Barnard, Edward S. and Buonassisi, Tonio and Haight, Richard},
abstractNote = {},
doi = {10.1063/1.4982906},
journal = {Journal of Applied Physics},
number = 17,
volume = 121,
place = {United States},
year = 2017,
month = 5
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on May 3, 2018
Publisher's Accepted Manuscript

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  • Ultrahigh vacuum studies of reactive and unreactive metals on a wide range of semiconductors reveal new systematics of Schottky barrier formation. Surface work function, band bending, and chemical bonding measurements indicate several qualitatively different mechanisms of barrier formation, each determined by the degree of interface chemical reactivity. In general, the Schottky barrier formation can be characterized by a twofold process: local charge redistribution plus surface space charge transfer. The specific interface bonding determines the sign and magnitude of the local charge redistribution. Correlations between these interface phenomena and deviations from ideal barrier heights suggest a framework based on interface bondingmore » for determining Schottky barrier heights.« less
  • The impact of boron doping on the p-layer of thin film silicon solar cells is assessed by measuring the effective Schottky barrier height of ZnO/a-Si:H and ZnO/μc-Si:H heterojunctions. A deviation from ideal diode characteristics is revealed by an increase of ideality factor with doping concentration. Higher current densities and lower effective Schottky barriers are evaluated for higher doping levels, resulting in increasingly Ohmic behaviour. This is attributed to an enhancement of tunneling through a thinner depletion region, as supported by computer simulations. Extracted barriers are in the range of 0.7–1 eV for the heterojunctions with rectifying behaviour.
  • The effect of ultraviolet (UV) illumination on the electrical and spectral characteristics of Schottky-barrier photodiodes based on ZnS single crystals is studied. It is found that irradiation deteriorates their photosensitivity and changes the current–voltage and capacitance–voltage characteristics and the surface profile of the blocking electrode. It is shown that the main reason for a decrease in the photosensitivity of the diodes is the photoinduced drift of mobile donors in the electric field of the barrier. This drift depends on the crystallographic orientation of the surface being irradiated. Another photoinduced process observed in the diodes is photolysis of the ZnS crystal.more » This process mainly determines the change in the electrical characteristics of the diodes and in the surface profile of the electrode at an insignificant change in the photosensitivity.« less
  • A microscopic analysis of current and voltage fluctuations in GaAs Schottky barrier diodes under forward-bias conditions in the absence of 1/f contributions is presented. Calculations are performed by coupling self-consistently an ensemble Monte Carlo simulator with a one-dimensional Poisson solver. By using current- and voltage-operation modes the microscopic origin and the spatial location of the noise sources, respectively, is provided. At different voltages the device exhibits different types of noise (shot, thermal, and excess), which are explained as a result of the coupling between fluctuations in carrier velocity and self-consistent field. The essential role of the field fluctuations to correctlymore » determine the noise properties in these diodes is demonstrated. The results obtained for the equivalent noise temperature are found to reproduce the typical behavior of experimental measurements. An equivalent circuit is proposed to predict and explain the noise spectra of the device under thermionic emission-based operation. {copyright} {ital 1997 American Institute of Physics.}« less