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Title: International Conference on Metalorganic Vapor Chase Epitaxy (ICMOVPE) XVIII

Abstract

The ICMOVPE-XVIII conference created meaningful opportunities for intellectual challenge, networking opportunities, and intellectual stimulation for graduate students, Post-Doctoral Fellows and all attendees. This technical and social program further provided many opportunities for communication, brainstorming, and transfer of information as well as the development of collaborations across many institutions and companies. We had a significant number of members of underrepresented groups in STEM attending this conference. We also are publishing the proceedings of this conference with the Journal of Crystal Growth, a journal which receives wide electronic distribution in many academic institutions world-wide, making the technical information presented at ICMOVPE-XVIII have a much broader impact than would otherwise be possible. ICMOVPE XVIII had a total of 216 presentations and of these; there were 70 Student oral or poster presentations. The funds we obtained for student support from the Department of Energy were distributed among the registered students and Post Docs to supplement the full cost of registration of $1,100 each for regular registration to the reduced rate of at $850 each for graduate students and Post Docs.

Authors:
 [1]
  1. Georgia Inst. of Technology, Atlanta, GA (United States)
Publication Date:
Research Org.:
Materials Research Society, Warrendale, PA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1355156
Report Number(s):
DE-SC0015976
DOE Contract Number:
SC0015976
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; metalorganic vapor phase epitaxy

Citation Formats

Dupuis, Russell D. International Conference on Metalorganic Vapor Chase Epitaxy (ICMOVPE) XVIII. United States: N. p., 2017. Web. doi:10.2172/1355156.
Dupuis, Russell D. International Conference on Metalorganic Vapor Chase Epitaxy (ICMOVPE) XVIII. United States. doi:10.2172/1355156.
Dupuis, Russell D. Fri . "International Conference on Metalorganic Vapor Chase Epitaxy (ICMOVPE) XVIII". United States. doi:10.2172/1355156. https://www.osti.gov/servlets/purl/1355156.
@article{osti_1355156,
title = {International Conference on Metalorganic Vapor Chase Epitaxy (ICMOVPE) XVIII},
author = {Dupuis, Russell D.},
abstractNote = {The ICMOVPE-XVIII conference created meaningful opportunities for intellectual challenge, networking opportunities, and intellectual stimulation for graduate students, Post-Doctoral Fellows and all attendees. This technical and social program further provided many opportunities for communication, brainstorming, and transfer of information as well as the development of collaborations across many institutions and companies. We had a significant number of members of underrepresented groups in STEM attending this conference. We also are publishing the proceedings of this conference with the Journal of Crystal Growth, a journal which receives wide electronic distribution in many academic institutions world-wide, making the technical information presented at ICMOVPE-XVIII have a much broader impact than would otherwise be possible. ICMOVPE XVIII had a total of 216 presentations and of these; there were 70 Student oral or poster presentations. The funds we obtained for student support from the Department of Energy were distributed among the registered students and Post Docs to supplement the full cost of registration of $1,100 each for regular registration to the reduced rate of at $850 each for graduate students and Post Docs.},
doi = {10.2172/1355156},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri May 05 00:00:00 EDT 2017},
month = {Fri May 05 00:00:00 EDT 2017}
}

Technical Report:

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  • N-type Ga{sub 0.8}In{sub 0.2}Sb epitaxial layers have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) using diethyltelluride (DETe) as the dopant source. The incorporation efficiency of Te in Ga{sub 0.8}In{sub 0.2}Sb and the electron mobility were found to be higher with GaSb substrates compared to using GaAs substrates. The electron concentration increased from 5 {times} 10{sup 16} cm{sup {minus}3} to 1.5 {times} 10{sup 18} cm{sup {minus}3} as the Te concentration was increased from 1 {times} 10{sup 17} cm{sup {minus}3} to 5 {times} 10{sup 18} cm{sup {minus}3}. As the Te concentration was increased further, the electronmore » concentration decreased, with only about 1% of the Te electrically active at a Te concentration of 2 {times} 10{sup 20} cm{sup {minus}3}.« less
  • P-type GaSb and Ga{sub 0.8}In{sub 0.2}Sb layers have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) using silane as the doping precursor. Hall measurements show that the concentration and mobility of holes in GaSb and Ga{sub 0.8}In{sub 0.2}Sb are higher when the layers are grown on GaSb substrates than when grown on GaAs substrates. Secondary ion mass spectroscopy (SIMS) results show that the incorporation of Si is higher when GaSb substrates are used. The compensation of Si acceptors is negligible in GaSb, but is as high as 25% in Ga{sub 0.8}In{sub 0.2}Sb.
  • P-type and n-type GaSb and GA{sub 0.8}In{sub 0.2}Sb layers have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) using silane and diethyltellurium (DETe) as the dopant precursors, respectively. Hall measurements show that the concentration and mobility of holes and electrons in GaSb and GA{sub 0.8}In{sub 0.2}Sb are higher when the layers are grown on GaSb substrates than when grown on GaAs substrates. Secondary ion mass spectrometry (SIMS) results show that the incorporation of Si and Te is higher when GaSb substrates are used. The electron concentration increased from 5 {times} 10{sup 16} cm{sup {minus}3} tomore » 1.5 {times} 10{sup 18} cm{sup {minus}3} as the Te concentration was increased from 1 {times} 10{sup 17} cm{sup {minus}3} to 5 {times} 10{sup 18} cm{sup {minus}3}. As the Te concentration was increased further, the electron concentration decreased, with only about 1% of the Te electrically active at a Te concentration of 2 {times} 10{sup 20} cm{sup {minus}3}.« less
  • In{sub 0.2}Ga{sub 0.8}Sb epitaxial layers and thermophotovoltaic (TPV) device structures have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE). Control of the n-type doping up to 1 {times} 10{sup 18} cm{sup {minus}3} was achieved using diethyltellurium (DETE) as the dopant source. A Hall mobility of greater than 8,000 cm{sup 2}/Vs at 77 K was obtained for a 3 {times} 10{sup 17} cm{sup {minus}3} doped In{sub 0.2}Ga{sub 0.8}Sb layer grown on high-resistivity GaSb substrate. The In{sub 0.2}Ga{sub 0.8}Sb epilayers directly grown on GaSb substrates were tilted with respect to the substrates, with the amount of tiltmore » increasing with the layer thickness. Transmission electron microscopy (TEM) studies of the layers showed the presence of dislocation networks across the epilayers parallel to the interface at different distances from the interface, but the layers above this dislocation network were virtually free of dislocations. A strong correlation between epilayer tilt and TPV device properties was found, with layers having more tilt providing better devices. The results suggest that the dislocations moving parallel to the interface cause lattice tilt, and control of this layer tilt may enable the fabrication of better quality device structures.« less
  • GaInSb and GaSb layers have been grown on GaSb and GaAs substrates using metalorganic vapor phase epitaxy (MOVPE) with trimethylgallium, trimethylindium and trimethylantimony as the sources. As grown layers are p type with the carrier concentration in the mid 10{sup 16} cm{sup {minus}3} range. N type layers are grown using diethyltellurium as the Te source. Incorporation of Te in high concentration showed compensation and secondary ion mass spectrometry (SIMS) result showed that only 2.5% of Te are active when 2 {times} 10{sup 19} cm{sup {minus}3} of Te was incorporated. The carrier concentration measured in n type samples increases as themore » temperature is lowered. This is explained by the presence of second band close to the conduction band minima. Silane which is a common n type dopant in GaAs and other III-V systems is shown to behave like p type in GaInSb. P-n junction structures have been grown on GaSb substrates to fabricate TPV cells.« less